Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.1(W)","Continuous Drain Current":"12.7(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"40(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"AUTOMOTIVEC","Operating Temp Range":"-40C to 150C","Package Type":"Direct-FET ST","Type":"Power MOSFET","Pin Count":"7","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.25V @ 250\u00b5A","Package / Case":"DirectFET\u2122 Isometric ST","Gate Charge (Qg) @ Vgs":"29nC @ 4.5V","Product Photos":"IRF6614TR1PBF","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"8.3 mOhm @ 12.7A, 10V","Datasheets":"IRF6614","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"4,800","Drain to Source Voltage (Vdss)":"40V","PCN Obsolescence/ EOL":"(EP) Pa...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"22 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12.7 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0083 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"102 A","Channel Type":"N-CHANNEL","FET T...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.25V @ 250\u00b5A","Package / Case":"DirectFET\u2122 Isometric ST","Gate Charge (Qg) @ Vgs":"29nC @ 4.5V","Product Photos":"IRF6614TR1PBF","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"8.3 mOhm @ 12.7A, 10V","Datasheets":"IRF6614","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1,000","Drain to Source Voltage (Vdss)":"40V","PCN Obsolescence/ EOL":"(EP) Pa...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.25V @ 250\u00b5A","Package / Case":"DirectFET\u2122 Isometric ST","Gate Charge (Qg) @ Vgs":"29nC @ 4.5V","Rds On (Max) @ Id, Vgs":"8.3 mOhm @ 12.7A, 10V","Product Photos":"IRF6614TR1PBF","PCN Assembly/Origin":"DirectFET Backend Wafer Processing 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","PCN Other":"MSL Update 20/Feb/2014","Da...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2.25V @ 250\u00b5A","Catalog Drawings":"IR Hexfet Circuit IR Hexfet Circuit","Package / Case":"DirectFET\u2122 Isometric ST","Gate Charge (Qg) @ Vgs":"29nC @ 4.5V","Rds On (Max) @ Id, Vgs":"8.3 mOhm @ 12.7A, 10V","Product Photos":"IRF6614TR1PBF","PCN Assembly/Origin":"DirectFET Backend Wafer Processing 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFET...

{"Category":"MOSFET","Maximum Drain Source Voltage":"40 V","Typical Rise Time":"27 ns","Typical Turn-Off Delay Time":"18 ns","Description":"Value","Maximum Continuous Drain Current":"12.7 A","Package":"7Direct-FET ST","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"13 ns","Channel Mode":"Enhancement","Operating Temperature":"-40 to 150 \u00b0C","RDS-on":"8.3@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"3.6 ns"}...