Product Datasheet Search Results:
6 Pages, 153 KB, Original- IRF634
- Fairchild Semiconductor
- Advanced Power MOSFET
7 Pages, 223 KB, Original- IRF634A
- Fairchild Semiconductor
- Advanced Power MOSFET
7 Pages, 188 KB, Scan- IRF634AJ69Z
- Fairchild Semiconductor Corporation
- 8.1 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
8 Pages, 650 KB, Original- IRF634B
- Fairchild Semiconductor
- 250V N-Channel MOSFET
10 Pages, 848 KB, Original- IRF634B_FP001
- Fairchild
- MOSFET N-CH 250V 8.1A TO-220 - IRF634B_FP001
11 Pages, 291 KB, Original- IRF634BFP001
- Fairchild Semiconductor
- IRF634BFP001
6 Pages, 154 KB, Original- IRF634S
- Fairchild Semiconductor
- Advanced Power MOSFET
5 Pages, 200 KB, Scan- IRF634
- Harris Semiconductor
- Power MOSFET Data Book 1990
1 Pages, 41 KB, Original- IRF634
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
11 Pages, 248 KB, Original- IRF634N
- International Rectifier
- Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A)
11 Pages, 248 KB, Original- IRF634NL
- International Rectifier
- HEXFET Power MOSFET
11 Pages, 221 KB, Original- IRF634NLPBF
- International Rectifier
- HEXFET Power MOSFET
Product Details Search Results:
Fairchildsemi.com/IRF634AJ69Z
{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"32 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"205 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8.1 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Ty...
1504 Bytes - 08:53:53, 23 December 2024
Fairchildsemi.com/IRF634B_FP001
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"50","Supplier Device Package":"TO-220","Datasheets":"IRF(S)634B TO220B03 Pkg Drawing","Rds On (Max) @ Id, Vgs":"450 mOhm @ 4.05A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"74W","Package / Case":"TO-220-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"250V",...
1687 Bytes - 08:53:53, 23 December 2024
Fairchildsemi.com/IRF634BFP001
734 Bytes - 08:53:53, 23 December 2024
Onsemi.com/IRF634B_FP001
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Power Dissipation":"74(W)","Continuous Drain Current":"8.1(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"250(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-220","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1478 Bytes - 08:53:53, 23 December 2024
St.com/IRF634
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3, TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"MESH OVERLAY\u2122","Standard Package":"1,000","Supplier Device Package":"TO-220AB","Datasheets":"IRF634(FP)","Rds On (Max) @ Id, Vgs":"450 mOhm @ 4A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"80W","Package / Case":"TO-220-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)"...
1542 Bytes - 08:53:53, 23 December 2024
Vishay.com/IRF634
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"770pF @ 25V","Series":"-","Standard Package":"1,000","Supplier Device Package":"TO-220AB","Datasheets":"IRF634PBF Packaging Information","Rds On (Max) @ Id, Vgs":"450 mOhm @ 5.1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"74W","Package / Case":"TO-220-3","Mounting Type":"Thr...
1626 Bytes - 08:53:53, 23 December 2024
Vishay.com/IRF634-001
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"34 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8.4 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Packag...
1395 Bytes - 08:53:53, 23 December 2024
Vishay.com/IRF634-001PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8.4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"34 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Vo...
1459 Bytes - 08:53:53, 23 December 2024
Vishay.com/IRF634-002
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"300 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8.1 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1448 Bytes - 08:53:53, 23 December 2024
Vishay.com/IRF634-002PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"300 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8.1 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"ME...
1508 Bytes - 08:53:53, 23 December 2024
Vishay.com/IRF634-003
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"300 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8.1 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Volta...
1445 Bytes - 08:53:53, 23 December 2024
Vishay.com/IRF634-003PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"300 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8.1 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.4500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"32 A","Channel Type":"N-CHANNEL","FET Technology":"ME...
1508 Bytes - 08:53:53, 23 December 2024
