Rev. A, November 2001
IRF634B/IRFS634B
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
©2001 Fairchild Semiconductor Corporation
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 4.9mH, IAS = 8.1A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 8.1A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Condi tions Min Typ Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, ID = 250 µA250 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.27 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V -- -- 10 µA
VDS = 200 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0 -- 4.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 4.05 A -- 0.345 0.45 Ω
gFS Forward Transconductance VDS = 40 V, ID = 4.05 A -- 7.6 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 780 1000 pF
Coss Output Capacitance -- 95 125 pF
Crss Reverse Transfer Capacitance -- 20 2 5 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 125 V, ID = 8.1 A,
RG = 25 Ω
-- 15 40 ns
trTurn-On Rise Time -- 75 160 ns
td(off) Turn-Off De l a y Time -- 10 0 210 n s
tfTurn-Off Fall Time -- 6 5 140 n s
QgTotal Gate Charge VDS = 200 V, ID = 8.1 A,
VGS = 10 V
-- 29 38 nC
Qgs Gate-Source Charge -- 4.2 -- nC
Qgd Gate-Drain Charge -- 14 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 8.1 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32.4 A
VSD Drain-Source Diode Forward V oltage VGS = 0 V, IS = 8.1 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, IS = 8.1 A,
dIF / dt = 100 A/µs
-- 170 -- ns
Qrr Reverse Recovery Charge -- 0.91 -- µC