Product Datasheet Search Results:

IRF610.pdf5 Pages, 149 KB, Scan
IRF610
Fairchild Semiconductor
N-Channel Power MOSFETs, 3.5A, 150-200V
IRF610-613.pdf5 Pages, 149 KB, Scan
IRF610-613
Fairchild Semiconductor
N-Channel Power MOSFETs/ 3.5A/ 150-200V
IRF610A.pdf6 Pages, 166 KB, Original
IRF610AJ69Z.pdf7 Pages, 250 KB, Original
IRF610AJ69Z
Fairchild Semiconductor Corporation
3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
IRF610B.pdf10 Pages, 865 KB, Original
IRF610B_FP001.pdf10 Pages, 865 KB, Original
IRF610B_FP001
Fairchild Semiconductor
200V N-Channel B-FET / Substitute of IRF610 & IRF610A
IRF610.pdf4 Pages, 200 KB, Original
IRF610.pdf4 Pages, 200 KB, Original
IRF610
Frederick Components
Power MOSFET Selection Guide
IRF610.pdf19 Pages, 625 KB, Original
IRF610
Motorola / Freescale Semiconductor
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
IRF610.pdf5 Pages, 165 KB, Scan
IRF610
General Electric Solid State
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.5A.
IRF610.pdf2 Pages, 125 KB, Scan
IRF610
General Electric
Power Transistor Data Book 1985
IRF610.pdf5 Pages, 176 KB, Scan
IRF610
Harris Semiconductor
Power MOSFET Data Book 1990

Product Details Search Results:

Fairchildsemi.com/IRF610AJ69Z
{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"10 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"44 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"3.3 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Typ...
1486 Bytes - 22:18:08, 24 December 2024
Irf.com/IRF6100
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.2V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1230pF @ 15V","Series":"HEXFET\u00ae","Standard Package":"6,000","Supplier Device Package":"4-FlipFet\u2122","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRF6100","Rds On (Max) @ Id, Vgs":"65 mOhm @ 5.1A, 4.5V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & ...
1594 Bytes - 22:18:08, 24 December 2024
Irf.com/IRF6100PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"1.2V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"6,000","Supplier Device Package":"4-FlipFet\u2122","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Datasheets":"IRF6100PBF","Rds On (Max) @ Id, Vgs":"65 mOhm @ 5.1A, 4.5V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.2W","Package / Ca...
1588 Bytes - 22:18:08, 24 December 2024
Irf.com/IRF6100TR
{"Status":"DISCONTINUED","Channel Type":"P-CHANNEL","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"FLIPFET, ISOMETRIC-4","Terminal Form":"BALL","Operating Mode":"ENHANCEMENT","Package Style":"GRID ARRAY","Drain Current-Max (ID)":"5.1 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","...
1408 Bytes - 22:18:08, 24 December 2024
Siliconix_vishay/IRF610PBF
789 Bytes - 22:18:08, 24 December 2024
Various/IRF610R
{"C(iss) Max. (F)":"135p","Absolute Max. Power Diss. (W)":"43","g(fs) Max, (S) Trans. conduct,":"1.3","I(D) Abs. Max.(A) Drain Curr.":"2.1","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"21n","r(DS)on Max. (Ohms)":"1.5","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"8","I(GSS) Max. (A)":"500n","g(fs) Min. (S) Trans. conduct.":"0.8","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.6","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packag...
1294 Bytes - 22:18:08, 24 December 2024
Vishay.com/IRF610
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"1.5 Ohm @ 2A, 10V","FET Feature":"Standard","Product Photos":"TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"1,000","Supplier Device Package":"TO-220AB","Other Names":"*IRF610","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRF610PBF Packaging Information","Power - Max":"36W","Package / Case":"TO-220-3","Mounting Type":"Through Hole","Drain to Sourc...
1661 Bytes - 22:18:08, 24 December 2024
Vishay.com/IRF610-001
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC/EPOXY","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"8 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"3.3 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package...
1390 Bytes - 22:18:08, 24 December 2024
Vishay.com/IRF610-001PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"8 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltag...
1454 Bytes - 22:18:08, 24 December 2024
Vishay.com/IRF610-002
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"64 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.3 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...
1442 Bytes - 22:18:08, 24 December 2024
Vishay.com/IRF610-002PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"64 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-...
1504 Bytes - 22:18:08, 24 December 2024
Vishay.com/IRF610-003
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"64 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.3 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"10 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...
1440 Bytes - 22:18:08, 24 December 2024

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