Product Datasheet Search Results:
12 Pages, 701 KB, Original- AUIRF4104S
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 40V 120A Automotive 3-Pin(2+Tab) D2PAK Tube
12 Pages, 379 KB, Original- IRF4104SPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 40V 120A 3-Pin(2+Tab) D2PAK Tube
15 Pages, 352 KB, Original- AUIRF4104S
- International Rectifier
- MOSFET N-CH 40V 75A D2PAK - AUIRF4104S
15 Pages, 352 KB, Original- AUIRF4104STRL
- International Rectifier
- MOSFET N-CH 40V 75A D2PAK - AUIRF4104STRL
15 Pages, 352 KB, Original- AUIRF4104STRR
- International Rectifier
- MOSFET N-CH 40V 75A D2PAK - AUIRF4104STRR
13 Pages, 262 KB, Original- IRF4104S
- International Rectifier
- MOSFET N-CH 40V 75A D2PAK - IRF4104S
12 Pages, 379 KB, Original- IRF4104SPBF
- International Rectifier
- MOSFET N-CH 40V 75A D2PAK - IRF4104SPBF
12 Pages, 379 KB, Original- IRF4104STRL
- International Rectifier
- 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
12 Pages, 379 KB, Original- IRF4104STRR
- International Rectifier
- 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
12 Pages, 379 KB, Original- IRF4104STRRPBF
- International Rectifier
- 75 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Product Details Search Results:
Infineon.com/AUIRF4104S
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"120(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"40(V)","Packaging":"Rail/Tube","Power Dissipation":"140(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1556 Bytes - 21:21:59, 27 October 2024
Infineon.com/IRF4104SPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"120(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"40(V)","Packaging":"Rail/Tube","Power Dissipation":"140(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1524 Bytes - 21:21:59, 27 October 2024
Irf.com/AUIRF4104S
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"100nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"5.5 ...
1834 Bytes - 21:21:59, 27 October 2024
Irf.com/AUIRF4104STRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"100nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"5.5 ...
1871 Bytes - 21:21:59, 27 October 2024
Irf.com/AUIRF4104STRR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"220 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0055 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"470 A","Channel Type":"N-CHANNE...
1570 Bytes - 21:21:59, 27 October 2024
Irf.com/IRF4104S
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"100nC @ 10V","Product Photos":"TO-263","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"5.5 mOhm @ 75A, 10V","Datasheets":"IRF4104(S,L)","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"50","Drain...
1731 Bytes - 21:21:59, 27 October 2024
Irf.com/IRF4104SPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"75A (Tc)","Gate Charge (Qg) @ Vgs":"100nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Backend Wafer Transfer 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"5.5 mOhm @...
2103 Bytes - 21:21:59, 27 October 2024
Irf.com/IRF4104STRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"220 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0055 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"470 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1540 Bytes - 21:21:59, 27 October 2024
Irf.com/IRF4104STRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"220 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0055 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"470 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1539 Bytes - 21:21:59, 27 October 2024
Irf.com/IRF4104STRRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"220 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0055 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"470 A","Channel Type":"N-CHAN...
1618 Bytes - 21:21:59, 27 October 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF4104S.pdf | 0.27 | 1 | Request |
