Product Datasheet Search Results:
5 Pages, 142 KB, Scan- IRF241
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 18A, 150-200V
4 Pages, 200 KB, Original- IRF241
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF241
- Frederick Components
- Power MOSFET Selection Guide
19 Pages, 625 KB, Original- IRF241
- Motorola / Freescale Semiconductor
- TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39
5 Pages, 160 KB, Scan- IRF241
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A.
2 Pages, 127 KB, Scan- IRF241
- General Electric
- Power Transistor Data Book 1985
5 Pages, 197 KB, Scan- IRF241
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 185 KB, Scan- IRF241R
- Harris Semiconductor
- Power MOSFET Data Book 1990
1 Pages, 42 KB, Original- IRF241
- International Rectifier
- TO-3 N-Channel Hexfet Power MOSFETS
1 Pages, 41 KB, Original- IRF241R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
Product Details Search Results:
Various/IRF241R
{"C(iss) Max. (F)":"1.3p","Absolute Max. Power Diss. (W)":"125","g(fs) Max, (S) Trans. conduct,":"10","I(D) Abs. Max.(A) Drain Curr.":"11","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"80n","r(DS)on Max. (Ohms)":"180m","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"72","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"6.0","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"10","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Packag...
1290 Bytes - 13:32:27, 24 December 2024
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