ODE ff 38750481 0014289 y 3875081 G E SOLID STATE Standard Power MOSFETs DiE 18289 oa IRF241, IRF243 File Number 1584 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 16A and 18A, 150V fps(on) = 0.18 N and 0.22.0 Features: @ SOA is power-dissipation limited m= Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance @ Majority carrier device The IRF241 and RF243 are n-channel enhancement- mode.silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be oper- ated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-204AE steel package. Absolute Maximum Ratings Parameter - Source Drain - Gate = Continuous Drain Current Continuous Drain Current Drain Gate - Source Max. Power Factor Inductive Currant, Clamped Junction and Range Storage Lead 232 N-CHANNEL ENHANCEMENT MODE s 9208-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION ORAIN SOURCE (FLANGE } GATE 92Cs-37601 JEDEC TO-204AE lAF243 #20 125 (See 14) 1 14h (See Fig. 16 and 16}1 = 5O0uH 72 64 -55 to 160_O1 ve Wsazsoan 0014290 -0 Die 18290 ol S7n//. 3875081 G E SOLID STATE Standard Power MOSFETs IRF241, IRF243 Electrical Characteristics @T = 25C (Unless Otherwise Specified) Parameter Tyee Min, | Tyo. | Max. | Units Tesi Conditions BVpgg Drain - Source Sreakdown Voltage Vag = OV _ | WFRAIT agg | | - Vv a: IRF243 Ip = 250uA Vesishy Gate Threshold Voltage ALL 2.0 = 40 7 Vos = Vas: 'p = 25044 igss _ Gate-Source Leakage Farward ALL - - 100 nA Vag = 20V lass _ Gate-Source Leakage Reverse ALL = - | -100 nA Vgs = -20V pss Zero Gate Voltage Drain Current ALL - - 250 A Vps = Max. Rating, Vgg = 0V = - | 1000 [7 a Vos = Max. Rating x 0.8, Vgs = OV. Tc = 125C Ipfon) _On-State Drain Current rent wile | K A Vos ? 'pton) * Poston) max. Yes = 10V IRF243 16 - - A Roston) Static Drain-Source On-State _ Resistance @ IRF 241 0.14 | 0.18 e Veg = 10V, Ip = 108 IRF 243 - 0.20 | 0.22 Q Sis Forward Transconductance ALL 60 790] stu Vos) 'oron)* fostoni max. 'p = 10K Ciss__input Capacitance Att = _| 1275} 1600 | _ oF Vos = OV. Vpg = 25V.f = 1.0 MHz Cose Qutput Capacitance ALL = 500 | 750 pF Bee Fig. 10 Css __ Reverse Wanster Capacitance ALL | 160] 300 | pF tdlon) _Turn-On Delay Time ALL = 16 | 30 ns Vop = 78Vilp = 10A.2, = 4.70 t Rise Time ALL = 27 60 ns See Fig. 17 ta(otf Tum-Off Delay Tima ALL ~ 40 80 ns {MOSFET switching times are essentially f Fail Time ALL _ 31 60 ns mndepandent of operating temperature ) a, Tota! Gate Charge Veg = 10V, I, = 224, Voc = O 8 Max. Rating. a - iS o os. (Gate-Source Plus Gate-Drain) AU 43 60 ne See Fig 18 for test circurt. (Gate charge ts essentially Qgs Gate-Source Charge ALL _ 16 _ ne independent of operating temperature } Qa Gate-Dram (Miller) Charge ALL - 27 ~- ac . lp Internal Drain Inductance ALL - 5.0 - nH Measured between Modified MOSFET the contact screw on. symbol! showing the header thatis closer to internal device source and gate pins inductances. and center of dia. o ls Internal Source Inductance ALL jira} - nH Measured {ram the wo source pin, 6 mm {0 251n) fiom header G and source bonding us * pad. & Thermal Resistance FinsG _ function-to-Case ALU = [| 1.0 [ecw Fincs Case-to-Sink ALL - 0.1 = screw Mounung surface flat, smooth, and greased Ringa _Junction-to-Ambrent ALL - = 30 SC/W Free Ait Operation Source-Drain Diode Ratings and Characteristics Ig Contnuous Source Current Modified MOSFET eymbot {Body Diode} InF241] | | 18 A showing the mtegral reverse P-N junction rectifier. a iRF243 - - 16 A Ign Pulse Source Current _ - 7 (Body Diode) @ (AF241 72 A G . IRF243 - - es A s Vsp Diode Forward Voltage @) inrosy] - {| - | 20] v Tg = 25C, Ig = IBA, Vag = OV IRF243 | - | 19 v Te = 25C, Is = 16A, Vag = OV ty Reverse Recovery Time ALL _ 650 _ ns Ty = 150C, Ip = 18A, dig/dt = 100Aius Cnr Reverse Recovered Charga ALL = al ~ 2c Ty = 150C, Ip = 186A, dip/dt = 100A/ys ton Forward Turn on Time ALL Intrinsic turn-on time is neghgible. Turn-on speed is substantially controtted by Lg + Lp- @Ty = 25C 10 150C. @DPulse Test: Pulse width < 300ps. Duty Cycle < 2%. GQ) Repetitrve Rating Pulse width limited by max. junction temperature, Sea Transient Thermal impedance Curve [Fig 5). 233cee - Ol ve Bsazsoax 0014291 A Bao); 3875081 GE SOLID STATE O1E 18291 OD Standard Power MOSFETs IRF241, IRF243 a xX 2 g g # & s z = % zu J Ee z 5 5 Vos? tafen* 2 6 2 6 0: Ofon} z z a a 3 3 6 10 20 a 0 0 0 2 0 Vps. ORAIK TO-SOURCE VOLTAGE (VOLTS) Vas. GATE-T0 SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 ~ Typical Transfer Characteristics 10 (p, ORAtN CURRENT (AMPERES) Ig. DRAIN CURRENT (AMPERES) Te: 9.5 F~ Ty 150C MAX Ah 1.0-c-w, 02 ol e 1 2 3 4 2 5 10 20 0 100 200 500 Vos. DRAIN TO-SOURCE VOLTAGE (VOLTS) Vos, DAAIN TO-SOUACE VOLTAGE (VOLTS) - Fig. 3 ~ Typical Saturation Characteristics Fig. 4 Maximum Safe Operating Area o bet} p12 8 1, OUTY FACTOR, 0 Z . 2. PER UNIT 8ASE = Raye = 10086 CW 3 Toe -Te = Pom Zpuctt 2 S$ we 2 S wot 2 5 wf 5 10 ty, SOUARE WAVE PULSE DURATION (SECONDS) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration THERMAL IMPEDANCE (PER UNIT) 2 we Zanuct/ Manse, NORMALIZED EFFECTIVE TRANSIENT R 5 2 5 4 2 5 193 4- 3875081 G E SOLID STATE gi, ve Wsazsos1 o018e42 4 T- 39-1] warren Power MOSFETs IRF241, IRF243 4. TRANSCONDUCTANCE (SIEMENS) Ipg, REVERSE DRAIN CURRENT |AMPERES) > tocan) * Roston} Q 8 16 a 2 40 _o oa oa 12 16 20 Ip, DRAIN CURRENT (AMPERES) Vgp.SQURCE TO DRAIN VOLTAGE (VOLTS} Fig. 6 Typical Transconductance Vs. Drain Current Fig. ? Typicat Source-Drain Diode Forward Voltage 20 & (NORMALIZED? a & ORAIN-TO-SQUACE ONSTATE RESISTANCE BVpss, DRAIN-TO-SOUACE BREAKDOWN VOLTAGE {NORMALIZE0) G85 2 5 s a e 075 0 0 cr 0 120 160 40 0 a a0 120 160 Ty, JUNCTION TEMPERATURE (2C} Ty, JUNCTION TEMPERATURE (9C} Fig. 8 Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature 2000 Cigg = Bay + Cog, Cy SHORTED Crm = Cod Cy Cy aera FA " St? Te hes gst g C, CAPACITANCE (pF) =22A FOR TEST CIRCUIT 18 Vas. GATE 70 SOURCE VOLTAGE {VOLTS} Q 5 oO 1 20 2% 2 6 40 45 0 20 40 60 Vag, ORAIN-TO SOURCE VOLTAGE (VOLTS) Og, TOTAL GATE CHARGE (nt) Fig, 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig, 11 Typical Gate Charge Vs. Gate-to-Source Voltage 2353875081 G E SOLID STATE Ol DE Q387S5041 0014293 b Ta739-/) Standard Power MOSFETs IRF241, IRF243 a = = 3 18 wa 2 a < w & = a g = Zz 2 IRF241 s & 3 w IRF243 & = 3 3 2 z z & = 3s eS | Z L 3 Ai OF = 2398 bURATION. Ty= 25C. (HEATING EFFECT OF 20 ys ' qa 25 50 B 400 ns 150 tp. DRAIN CURRENT (AMPERES) Tg, CASE TEMPERATURE (9c) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 ~ Maximum Drain Current Vs. Case Temperature Pp, POWER DISSIPATION (WATTS) Q 2 ou co 30 100 2 MG Tg, CASE TEMPERATURE (C) Fig. 14 Power Vs. Temperature Derating Curve VARY 4 TO O8TAIN REQUIRED PEAK ii 1 Ey = 088Vg55 Vege2ov ey Vg 0.788Vps5 ot L. 1 Fig. 15 Clamped Inductive Test Circuit Fig. 16 Clamped Inductive Waveforms +, o is USOLATED SUPPLY) iv CURRENT ADJUST Ry TO OBTAIN REGULATOR SPECIFIED Ig Ves Ww T BATTERY LL. [tie | IMPEDANCE 1. Fig. 17 Switching Time Test Circuit JL to CURRENT =" CURRENT SHURT SHUNT Fig. 18 Gate Charge Tast Circuit 236 ort