Product Datasheet Search Results:
5 Pages, 166 KB, Scan- IRF220
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 7A, 150-200V
5 Pages, 166 KB, Scan- IRF220-223
- Fairchild Semiconductor
- N-Channel Power MOSFETs 7A 150-200V
4 Pages, 200 KB, Original- IRF220
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF220
- Frederick Components
- Power MOSFET Selection Guide
5 Pages, 161 KB, Scan- IRF220
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A.
1 Pages, 41 KB, Original- IRF220
- Harris Semiconductor
- Power MOSFET Selection Guide
9 Pages, 260 KB, Original- IRF2204PBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 40V 210A 3-Pin(3+Tab) TO-220AB Tube
11 Pages, 326 KB, Original- IRF2204SPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 40V 170A 3-Pin(2+Tab) D2PAK Tube
7 Pages, 48 KB, Original- IRF220
- Intersil Corporation
- 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 ?, N-Channel Power MOSFETs
1 Pages, 41 KB, Scan- IRF220
- International Rectifier
- 5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
9 Pages, 157 KB, Original- IRF2204
- International Rectifier
- 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Product Details Search Results:
Infineon.com/IRF2204PBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"210(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"40(V)","Packaging":"Rail/Tube","Power Dissipation":"330(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1543 Bytes - 02:47:23, 27 December 2024
Infineon.com/IRF2204SPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"170(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"40(V)","Packaging":"Rail/Tube","Power Dissipation":"200(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1531 Bytes - 02:47:23, 27 December 2024
Irf.com/IRF220
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"20 A","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"5 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-source O...
1314 Bytes - 02:47:23, 27 December 2024
Irf.com/IRF2204LPBF
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"3.6 mOhm @ 130A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Package / Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Supplier Device Package":"TO-262","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Other Names":"*IRF2204LPBF","Packaging":"Tube","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRF2204...
1651 Bytes - 02:47:23, 27 December 2024
Irf.com/IRF2204PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"210A (Tc)","Gate Charge (Qg) @ Vgs":"200nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly/Origin":"Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"3.6 mOhm @ 130A, 10V","Datasheets":"IRF2204Pb...
1989 Bytes - 02:47:23, 27 December 2024
Irf.com/IRF2204S
{"Polarity":"N","Continuous Drain Current":"170 A","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Power MOSFET","Product Category":"MOSFET","Gate-Source Voltage (Max)":"\ufffd20 V","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Military","Package Type":"D2PAK","Drain-Source On-Res":"0.0036 ohm","Manufacturer":"INTERNATIONAL RECTIFIER","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Ra...
1600 Bytes - 02:47:23, 27 December 2024
Irf.com/IRF2204SPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"170A (Tc)","Gate Charge (Qg) @ Vgs":"200nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Alternate Assembly Site 11/Nov/2013 Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rd...
2095 Bytes - 02:47:23, 27 December 2024
Irf.com/IRF2204STRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"460 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0036 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"850 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1541 Bytes - 02:47:23, 27 December 2024
Irf.com/IRF2204STRLPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"460 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0036 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"850 A","Channel Type":"N-CHAN...
1621 Bytes - 02:47:23, 27 December 2024
Irf.com/IRF2204STRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"460 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0036 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"850 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...
1537 Bytes - 02:47:23, 27 December 2024
Irf.com/IRF2204STRRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"460 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0036 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"850 A","Channel Type":"N-CHAN...
1621 Bytes - 02:47:23, 27 December 2024
Irf.com/IRF220E
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain-source On Resistance-Max":"0.8000 ohm","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","DS Breakdown Voltage-Min":"200 V","Numb...
1219 Bytes - 02:47:23, 27 December 2024
