1
Semiconductor
October 1997
Features
• 4.0A and 5.0A, 150V and 200V
•r
DS(ON) = 0.8Ω and 1.2Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA09600.
Symbol
Packaging
JEDEC TO-204AA
Ordering Information
PART NUMBER PACKAGE BRAND
IRF220 TO-204AA IRF220
IRF221 TO-204AA IRF221
IRF222 TO-204AA IRF222
IRF223 TO-204AA IRF223
NOTE: When ordering, use the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 199& File Number 1567.2
IRF220, IRF221,
IRF222, IRF223
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm,
N-Channel Power MOSFETs
2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF220 IRF221 IRF222 IRF223 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .VDS 200 150 200 150 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR 200 150 200 150 V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID5.0
3.0 5.0
3.0 4.0
2.5 4.0
2.5 A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM 20 20 16 16 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .PD40 40 40 40 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 0.32 0.32 0.32 W/oC
Single Pulse Avalanche Rating. . . . . . . . . . . . . . . . . . . . .EAS 85 85 85 85 mJ
Operating and Storage Temperature . . . . . . . . . . . .TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg 300
260 300
260 300
260 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, (Figure 10)
IRF220, IRF222 200 - - V
IRF221, IRF223 150 - - V
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.0 - 4.0 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA
VDS = 0.8 x Rated BVDSS, V GS = 0V, TJ = 125oC - - 250 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
IRF220, IRF221 5.0 - - A
IRF222, IRF223 4.0 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 2.5A, VGS = 10V, (Figure 8)
IRF220, IRF221 - 0.5 0.8 Ω
IRF222, IRF223 - 0.8 1.2 Ω
Forward Transconductance (Note 2) gfs VDS > ID(ON) x rDS(ON)MAX, ID = 2.5A 1.3 2.5 - S
Turn-On Delay Time td(ON) VDD = 0.5 x Rated BVDSS, ID≈2.5A, RG = 50Ω
For IRF220, 222 RL = 80Ω
For IRF221, 223 RL = 60Ω
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
-2040ns
Rise Time tr-3060ns
Turn-Off Delay Time td(OFF) - 50 100 ns
Fall Time tf-3060ns
Total Gate Charge
(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 6.0A, VDS = 0.8 x Rated BVDSS
Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate
Charge is Essentially Independent of Operating
Temperature
-1115nC
Gate to Source Charge Qgs - 5.0 - nC
Gate to Drain “Miller” Charge Qgd - 6.0 - nC
IRF220, IRF221, IRF222, IRF223
3
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz
(Figure 11) - 450 - pF
Output Capacitance COSS - 150 - pF
Reverse Transfer Capacitance CRSS -40-pF
Internal Drain Inductance LDMeasured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
- 5.0 - nH
Internal Source Inductance LSMeasured From the
Source Lead, 6mm
(0.25in) From the Flange
and the Source Bonding
Pad
- 12.5 - nH
Thermal Resistance Junction to Case RθJC - - 3.12 oC/W
Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 30 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Rectifier
IRF220, IRF221 - - 5.0 A
IRF222, IRF223 - - 4.0 A
Pulse Source to Drain Current (Note 3) ISDM
IRF220, IRF221 - - 20 A
IRF222, IRF223 - - 16 A
Source to Drain Diode Voltage (Note 2) VSD
IRF220, IRF221 TC = 25oC, ISD = 5.0A, VGS = 0V, (Figure 13) - - 2.0 V
IRF222, IRF223 TC = 25oC, ISD = 4.0A, VGS = 0V, (Figure 13) - - 1.8 V
Reverse Recovery Time trr TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs - 350 - ns
Reverse Recovery Charge QRR TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs - 2.3 - µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 10V, starting TJ= 25oC, L = 6.18mH, RG= 50Ω, peak IAS = 5A. See Figures 15, 16.
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
LS
LD
G
D
S
G
D
S
IRF220, IRF221, IRF222, IRF223
4
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
0 50 100 150
0
TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
2
1
025 50 75 100 125 150
4
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
5
3IRF222, IRF223
IRF220, IRF221
t1, RECTANGULAR PULSE DURATION (s)
10
ZθJC, NORMALIZED TRANSIENT
10-3 10-2 10-1 1
10-5 10-4
1.0
0.01
0.1
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
PDM
t1
t2
0.1
0.02
0.2
0.5
0.01
0.05
SINGLE PULSE
THERMAL IMPED ANCE
1.0 10 100 1000
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
10
1.0
0.1
ID, DRAIN CURRENT (A)
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
OPERATION IN THIS AREA
IS LIMITED BY rDS(ON)
IRF221
IRF223 IRF220
IRF222
IRF220, IRF221
IRF220, IRF221
IRF222, IRF223
IRF222, IRF223 100µs
100ms
10ms
1ms
10µs
DC
0 20 40 60 80 100
10
8
6
4
2
0
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
80µs PULSE TEST
VGS = 5V
VGS = 4V
VGS = 6V
VGS = 7V
10V
IRF220, IRF221, IRF222, IRF223
5
FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2µs is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDO WN
VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
5
4
3
2
1
00 246810
V
DS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
80µs PULSE TEST
VGS = 5V
10V
8V
6V
4V
024 6810
10
8
6
4
2
0
VGS, GATE TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
80µs PULSE TEST
VDS >ID(ON) x rDS(ON) MAX
TJ = 125oC
TJ = 25oC
TJ= -55oC
0 5 10 15 20
1.5
1.0
0.5
0
ID, DRAIN CURRENT (A)
rDS(ON), DRAIN TO SOURCE
ON RESISTANCE (Ω)
VGS = 20V
VGS = 10V
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
2.2
1.8
1.4
1.0
0.6
0.2
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
VGS = 10V
ID = 2A
-40 0 40 80 120 160
1.25
1.15
1.05
0.95
0.85
0.75
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
TJ, JUNCTION TEMPERATURE (oC)
ID = 250µA1000
800
600
400
200
001020304050
C, CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
COSS
CRSS
CISS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
IRF220, IRF221, IRF222, IRF223
6
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
5
4
3
2
1
0
gfs, TRANSCONDUCTANCE (S)
0246 810
I
D
, DRAIN CURRENT (A)
VDS > ID(ON) x rDS(ON)MAX
80µs PULSE TEST
TJ = 125oC
TJ = -55oC
TJ = 25oC
2
100
10
1.0 01 23 4
I
SD, SOURCE TO DRAIN CURRENT (A)
VSD, SOURCE TO DRAIN VOLTAGE (V)
TJ = 150oC
TJ = 150oC
TJ = 25oC
TJ = 25oC
20
15
10
5
0
VGS, GATE TO SOURCE VOLTAGE (V)
048121620
Q
g(TOT), TOTAL GATE CHARGE (nC)
ID = 6.0A
VDS = 160V
IRF220, IRF222
VDS = 40V
VDS = 100V
IRF220, IRF221, IRF222, IRF223
7
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED INDUCTIVE WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
tP
VGS
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
VGS
RL
RG
DUT
+
-VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
0.3µF
12V
BATTERY 50kΩ
VDS
S
DUT
D
G
Ig(REF)
0
(ISOLATED
VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT
Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
IG(REF)
0
IRF220, IRF221, IRF222, IRF223
