Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"1.9A (Tc)","Gate Charge (Qg) @ Vgs":"12nC @ 10V","Product Photos":"TO-252-3","PCN Design\/Specification":"Passivation Material 14\/May\/2008","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"4.7 Ohm @ 950mA, 10V","Datasheets":"FQD2N60C, FQU2N60C D-...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-252-3 QFET Series","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"235pF @ 25V","Series":"QFET\u00ae","Standard Package":"1","Supplier Device Package":"D-Pak","Datasheets":"FQD2N60C, FQU2N60C","Rds On (Max) @ Id, Vgs":"4.7 Ohm @ 950mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"2.5W","Package \/ Case":"TO-252-3, DPak (...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"1.9(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"600(V)","Packaging":"Tape and Reel","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"1.9(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"600(V)","Packaging":"Tape and Reel","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...