Product Datasheet Search Results:
- FF401R17KF6C_B2
- Infineon Technologies
- FF401R17KF6C_B2
Product Details Search Results:
Infineon.com/FF401R17KF6C_B2
{"Gate-Emitter Leakage Current":"400 nA","Continuous Collector Current at 25 C":"650 A","Product Category":"IGBT Modules","Factory Pack Quantity":"4","Brand":"Infineon Technologies","Pd - Power Dissipation":"3.1 kW","Collector-Emitter Saturation Voltage":"2.6 V","Collector- Emitter Voltage VCEO Max":"1700 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"+/- 20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"IHM","Configuration":"Dual","Maximum Operat...
1488 Bytes - 05:05:05, 30 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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FF401R17KF6C_B2.pdf | 0.12 | 1 | Request |