
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
vorläufige Daten
preliminary data
Charakteristische Werte / Characteristic values
Transistor / Transistor min. typ. max.
Einschaltverzögerungszeit (ind. Last) IC = 400A, VCE = 900V
turn on delay time (inductive load) VGE = ±15V, RG = 1,8 W, Tvj = 25°C td,on - 0,4 - µs
VGE = ±15V, RG =1,8 W, Tvj = 125°C - 0,4 - µs
Anstiegszeit (induktive Last) IC = 400A, VCE = 900V
rise time (inductive load) VGE = ±15V, RG =1,8 W, Tvj = 25°C tr- 0,15 - µs
VGE = ±15V, RG =1,8 W, Tvj = 125°C - 0,15 - µs
Abschaltverzögerungszeit (ind. Last) IC = 400A, VCE = 900V
turn off delay time (inductive load) VGE = ±15V, RG = 3,6W, Tvj = 25°C td,off - 1,1 - µs
VGE = ±15V, RG = 3,6W, Tvj = 125°C - 1,1 - µs
Fallzeit (induktive Last) IC = 400A, VCE = 900V
fall time (inductive load) VGE = ±15V, RG = 3,6W, Tvj = 25°C tf- 0,1 - µs
VGE = ±15V, RG = 3,6W, Tvj = 125°C - 0,11 - µs
Einschaltverlustenergie pro Puls IC = 400A, VCE = 900V, VGE = 15V
turn-on energy loss per pulse RG,on = 1,8 W, Tvj = 125°C, LS = 60nH Eon - 190 - mWs
Abschaltverlustenergie pro Puls IC = 400A, VCE = 900V, VGE = 15V
turn-off energy loss per pulse RG = 3,6W, Tvj = 125°C, LS = 60nH Eoff - 150 - mWs
Kurzschlußverhalten tP £ 10µsec, VGE £ 15V
SC Data TVj£125°C, VCC=1000V, VCEmax=VCES -LsCE ·dI/dt ISC - 1600 - A
Modulinduktivität
stray inductance module LsCE - 58 - nH
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip pro Zweig / per arm RCC´+EE´ - 0,78 - mW
Charakteristische Werte / Characteristic values
Diode / Diode min. typ. max.
Durchlaßspannung IF = 400A, VGE = 0V, Tvj = 25°C VF- 2,1 2,5 V
forward voltage IF = 400A, VGE = 0V, Tvj = 125°C - 2,1 2,5 V
Rückstromspitze IF = 400A, - diF/dt =2400 A/µsec
peak reverse recovery current VR = 900V, VGE = -10V, Tvj = 25°C IRM - 270 - A
VR = 900V, VGE = -10V, Tvj = 125°C - 320 - A
Sperrverzögerungsladung IF = 400A, - diF/dt =2400 A/µsec
recovered charge VR = 900V, VGE = -10V, Tvj = 25°C Qr- 75 - µAs
VR = 900V, VGE = -10V, Tvj = 125°C - 145 - µAs
Abschaltenergie pro Puls IF = 400A, - diF/dt =2400 A/µsec
reverse recovery energy VR = 900V, VGE = -10V, Tvj = 25°C Erec - 35 - mWs
VR = 900V, VGE = -10V, Tvj = 125°C - 70 - mWs
FF 401 R 17 KF6C B2
2(8) FF401R17KF6CB2_V.xls
http://store.iiic.cc/