Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"4.7A","Gate Charge (Qg) @ Vgs":"35nC @ 10V","Product Photos":"8-SOIC","PCN Design\/Specification":"Mold Compound 12\/Dec\/2007","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"44 mOhm @ 4.7A, 10V","Datasheets":"FDS3890","FET Type":"2 N-Channel (D...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Avalanche Energy Rating (Eas)":"175 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.7 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0440 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXID...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Avalanche Energy Rating (Eas)":"175 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.7 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0440 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXID...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Avalanche Energy Rating (Eas)":"175 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.7 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0440 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXID...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Avalanche Energy Rating (Eas)":"175 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.7 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0440 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXID...

{"Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2 W","Avalanche Energy Rating (Eas)":"175 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.7 A","Configuration":"SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0440 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"20 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXID...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"4.7(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"80(V)","Packaging":"Tape and Reel","Power Dissipation":"2(W)","Rad Hardened":"No","Package Type":"SOIC","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"2"}...