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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDS3890 80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 4.7 A, 80 V. RDS(ON) = 44 m @ VGS = 10 V RDS(ON) = 50 m @ VGS = 6 V * Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. * High performance trench technology for extremely low RDS(ON) * High power and current handling capability D1 D1 5 D2 6 D2 4 3 Q1 7 SO-8 S2 G2 S1 G1 Absolute Maximum Ratings Symbol 8 2 Q2 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 80 V VGSS Gate-Source Voltage 20 V ID Drain Current 4.7 A PD Power Dissipation for Dual Operation - Continuous (Note 1a) - Pulsed 20 2 Power Dissipation for Single Operation TJ, TSTG (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) 0.9 W -55 to +175 C (Note 1a) 78 C/W (Note 1) 40 C/W Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3890 FDS3890 13'' 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDS3890 Rev B(W) FDS3890 February 2001 Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) W DSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 40 V, ID = 4.7 A 175 mJ 4.7 A Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 A, Referenced to 25C VDS = 64 V, VGS = 0 V 1 A IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -20 V VDS = 0 V -100 nA 4 V On Characteristics 80 V 86 mV/C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A VGS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250 A, Referenced to 25C -6 VGS = 10 V, ID = 4.7 A ID = 4.4 A VGS = 6.0 V, VGS = 10 V, ID = 4.7 A, TJ = 125C 34 37 60 ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 4.7 A 24 S VDS = 40 V, f = 1.0 MHz V GS = 0 V, 1180 pF 2 2.3 mV/C 44 50 82 20 m A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) 171 pF 50 pF (Note 2) 11 20 ns 8 16 ns Turn-Off Delay Time 26 50 ns tf Turn-Off Fall Time 12 25 ns Qg Total Gate Charge 25 35 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD =40 V, VGS = 10 V, VDS = 40 V, VGS = 10 V ID = 1 A, RGEN = 6 ID = 4.7 A, 4.5 nC 5.8 nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A Voltage (Note 2) 0.74 1.3 A 1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 1in2 pad of 2 oz copper b) 125C/W when mounted on a .04 in2 pad of 2 oz copper c) 135C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS3890 Rev B(W) FDS3890 Electrical Characteristics FDS3890 Typical Characteristics 2 ID, DRAIN CURRENT (A) VGS = 10V 5.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 4.0V 16 12 8 3.5V 4 1.8 1.6 VGS = 4.0V 1.4 4.5V 5.0V 1.2 6.0V 10V 1 0.8 0 0 1 2 3 0 4 4 8 Figure 1. On-Region Characteristics. 16 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.1 2.2 ID = 4.7A VGS = 10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 12 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1 0.6 0.2 -50 -25 0 25 50 75 100 125 150 ID = 2.4 A 0.075 TA = 125oC 0.05 TA = 25oC 0.025 0 175 2 4 6 8 10 o TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) 20 ID, DRAIN CURRENT (A) VDS = 5V 16 25oC 12 8 TA = 125oC 4 -55oC 2 3 TA = 125oC 25oC 1 -55oC 0.1 0.01 0.001 0 1 VGS = 0V 10 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS3890 Rev B(W) FDS3890 Typical Characteristics 2000 f = 1MHz VGS = 0 V ID = 4.7A VDS = 10V 8 20V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 40V 6 4 1500 CISS 1000 500 2 0 0 0 6 12 18 24 0 30 20 Qg, GATE CHARGE (nC) 40 60 80 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 40 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) COSS CRSS 100s 1ms 10 10ms 100ms 1s 1 10s VGS = 10V SINGLE PULSE RJA = 135oC/W 0.1 DC TA = 25oC 0.01 0.1 1 10 SINGLE PULSE RJA = 135C/W TA = 25C 30 20 10 0 0.01 100 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 10 100 t1, TIME (sec) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) + RJA RJA = 135C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS3890 Rev B(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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