Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Package / Case":"SOT-23-6 Thin, TSOT-23-6","Current - Continuous Drain (Id) @ 25\u00b0C":"1.1A (Ta)","Gate Charge (Qg) @ Vgs":"11nC @ 10V","Product Photos":"PowerTrench Series","PCN Design/Specification":"Mold Compound 08/April/2008","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"725 mOhm @ 1.1A, 10V","Datasheets":"FDC2612","FET Type":"MOSFET N-C...

{"Category":"MOSFET","Maximum Drain Source Voltage":"200 V","Typical Turn-Off Delay Time":"17 ns","Description":"Value","Maximum Continuous Drain Current":"1.1 A","Package":"6SuperSOT","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"6 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"725@10V mOhm","Manufacturer":"Fairchild Semiconductor","Typical Fall Time":"8 ns"}...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SUPERSOT-6","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"1.1 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configura...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SUPERSOT-6","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"1.1 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configura...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"PowerTrench Series","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 250\u00b5A","Series":"PowerTrench\u00ae","Standard Package":"3,000","PCN Design/Specification":"Mold Compound 08/April/2008","Datasheets":"FDC2612","Rds On (Max) @ Id, Vgs":"725 mOhm @ 1.1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"800mW","Mounting Type":"Surface Mount","Package / Case":"SOT-23-...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SUPERSOT-6","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"1.1 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configura...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"SUPERSOT-6","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"1.1 A","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Package Shape":"RECTANGULAR","Configura...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"1.6(W)","Continuous Drain Current":"1.1(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"200(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TSOT-23","Operating Temp Range":"-55C to 150C","Type":"Power MOSFET","Pin Count":"6","Number of Elements":"1"}...