February 2002
2002 Fairchild Semiconductor Corporation FDC2612 Rev B3 (W)
FDC2612
200V N-Channel PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 1.1 A, 200 V. RDS(ON) = 725 mΩ @ VGS = 10 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
• Fast switching speed
• Low gate charge (8nC typical)
D
D
D
S
D
G
SuperSOT -6
TM
6
5
4
1
2
3
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 200 V
VGSS Gate-Source Voltage ± 20 V
ID Drain Current – Continuous (Note 1a) 1.1 A
– Pulsed 4
Maximum Power Dissipation (Note 1a) 1.6 W PD
(Note 1b) 0.8
TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.262 FDC2612 7’’ 8mm 3000 units
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FDC2612 Rev B3(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 200 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C 246
mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 160 V, VGS = 0 V 1 µA
IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –20 V , VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 4 4.5 V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
–8.7 mV/°C
RDS(on) Static Drain–Source
On Resistance
VGS = 10 V, ID = 1.1 A
VGS = 10 V, ID = 1.1 A, TJ = 125°C
605
1133
725
1430
mΩ
ID(on) On–State Drain Current VGS = 10 V, VDS = 10 V 4 A
gFS Forward Transconductance VDS = 10 V, ID = 1.1 A 4.4 S
Dynamic Characteristics
Ciss Input Capacitance 234 pF
Coss Output Capacitance 18 pF
Crss Reverse Transfer Capacitance
VDS = 100 V, V GS = 0 V,
f = 1.0 MHz
8 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 6 12 ns
tr Turn–On Rise Time 6 12 ns
td(off) Turn–Off Delay Time 17 30 ns
tf Turn–Off Fall Time
VDD = 100 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
8 16 ns
Qg Total Gate Charge 8 11 nC
Qgs Gate–Source Charge 1.6 nC
Qgd Gate–Drain Charge
VDS = 100 V, ID = 1.1 A,
VGS = 10 V
2.2 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 1.3 A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = 1.3 A(Note 2) 0.8 1.2 V
trr Diode Reverse Recovery Time 74.5 nS
Qrr Diode Reverse Recovery Charge
IF = 1.1A,
diF/dt = 300 A/µs (Note 2) 194 nC
Notes:
1.RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a 1in2 pad
of 2 oz copper
b) 156°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
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Typical Characteristics
0
1
2
3
4
0246810
VDS, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
6.5V
5.5V
VGS = 10V 6.0V
0.9
1
1.1
1.2
1.3
1.4
01234
ID, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 4.0V
4.5V 5.0V 10V
6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.2
0.6
1
1.4
1.8
2.2
2.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = 1.1A
VGS =10V
0.5
0.7
0.9
1.1
1.3
1.5
45678910
VGS, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
ID = 0.6A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
2
4
6
8
34567
VGS, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
TA = 125oC
-55oC
VDS = 25V
25oC
0.0001
0.001
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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FDC2612 Rev B3(W)
Typical Characteristics
0
3
6
9
12
15
0246810
Qg, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
ID = 1.1A VDS = 50V
150V
100V
0
50
100
150
200
250
300
350
0 25 50 75 100 125 150
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.001
0.01
0.1
1
10
0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC 1s
100ms
100
µ
s
RDS(ON) LIMIT
VGS = 10V
SINGLE PULSE
RθJA = 156oC/W
TA = 25oC
10ms
1ms
0
10
20
30
40
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 156°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
RθJA(t) = r(t) + RθJA
RθJA = 156°C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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As used herein:
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failure to perform when properly used in accordance
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user.
2. A critical component is any component of a life
support device or system whose failure to perform can
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
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