Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"10(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"4.6(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Power Dissipation":"8(W)","Operating Temp Range":"-55C to 150C","Package Type":"SC-73","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"10(V)","Channel Mode":"Enhancement","Power Dissipation":"8(W)","Continuous Drain Current":"4.6(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"100(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"SC-73","Operating Temp Range":"-55C to 150C","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-220-3, TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Input Capacitance (Ciss) @ Vds":"619pF @ 25V","Series":"TrenchMOS\u2122","Standard Package":"50","Supplier Device Package":"TO-220AB","Datasheets":"BUK(95180, 96180) -100A","Rds On (Max) @ Id, Vgs":"173 mOhm @ 5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"54W","Package / Case":"TO-220-3","Mountin...

{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1.5 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"N-CHANNEL","FET Technolog...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 1mA","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"11A (Tc)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"D2PAK SOT404","Rds On (Max) @ Id, Vgs":"173 mOhm @ 5A, 10V","Datasheets":"BUK(95180, 96180) -100A","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"Reel Trailer Update 08/May/2015","Drain to Source Voltage (Vdss)":"100V"...

{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"16 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2010 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","China RoHS Co...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 1mA","Package / Case":"TO-261-4, TO-261AA","Current - Continuous Drain (Id) @ 25\u00b0C":"4.6A (Tc)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SC-73","PCN Design/Specification":"Resin Hardener 02/Jul/2013 SOT223 Copper Wire 23/Dec/2013 Copper Wire Revision 17/Mar/2014 Copper Wire Revision 24/May/2014","Rds On (Max) @ Id, Vgs":"173 mOhm @ 5A, 10V","Datasheets":"BUK98180-100A","FET Type":"MOSFET N-Ch...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"SC-73","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Input Capacitance (Ciss) @ Vds":"619pF @ 25V","Series":"TrenchMOS\u2122","Standard Package":"1","Supplier Device Package":"SC-73","Datasheets":"BUK98180-100A","Rds On (Max) @ Id, Vgs":"173 mOhm @ 5A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Cut Tape (CT)","Power - Max":"8W","Pac...

{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"16 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2010 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","T...

{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"16 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.6 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2010 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","T...

{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"100","I(O) Max.(A) Output Current":"8.0","@t(w) (s) (Test Condition)":"10m","V(FM) Max.(V) Forward Voltage":"1.2","@Temp. (°C) (Test Condition)":"100","@V(R) (V)(Test Condition)":"100","V(RRM)(V) Rep.Pk.Rev. Voltage":"100","t(rr) Max.(s) Rev.Rec. Time":"35n","Package":"DO-220AB","I(RM) Max.(A) Pk. Rev. Current":"1.0m","@I(F) (A) (Test Condition)":"35n","Military":"N","@Temp (°C) (Test Condition)":"125","I(RM) Max.(A) Reverse Current":"10u","@I(FM) (A) (Test Condi...