Datasheet.Directory

{"Polarity":"N","Reverse Capacitance (Typ)":"52@800V(pF)","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"24(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"1000(V)","Channel Type":"N","Output Capacitance (Typ)@Vds":"190@800V(pF)","Power Dissipation":"1800(W)","Operating Temp Range":"-55C to 175C","Drain Source Voltage (Max)":"1000(V)","Rad Hardened":"No","Power Dissipation (Max)":"1800000(mW)","Scree...

{"Continuous Drain Current Id:":"24 A","Operating Frequency Max:":"30 MHz","Transistor Type:":"RF MOSFET","Drain Source Voltage Vds:":"1 kV","MSL:":"-","No. of Pins:":"6","Power Dissipation Pd:":"1.8 kW","RF Transistor Case:":"SMD","Operating Temperature Max:":"175 \u00b0C","Operating Temperature Min:":"-55 \u00b0C","Operating Frequency Min:":"-","SVHC:":"To Be Advised"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"24 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"1000 V","Transistor Application":"SWITCHING","Surface Mount":"Yes","Case Connection":"ISOLATED",...