DE475-102N21A
RF Power MOSFET
VDSS = 1000 V
ID25 = 24 A
RDS(on) = 0.41 Ω
PDC = 1800W
Symbol Test Conditions Maximum Ratings
VDSS TJ = 25°C to 150°C 1000 V
VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 Tc = 25°C 24 A
IDM Tc = 25°C, pulse width limited by TJM 144 A
IAR Tc = 25°C 21 A
EAR Tc = 25°C 30 mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
5 V/ns
IS = 0 >200 V/ns
PDC 1800 W
PDHS Tc = 25°C
Derate 4.0W/°C above 25°C 730 W
PDAMB Tc = 25°C 4.5 W
RthJC 0.08 C/W
RthJHS 0.20 C/W
Symbol Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified
min. typ. max.
VDSS VGS = 0 V, ID = 3 ma 1000 V
VGS(th) VDS = VGS, ID = 4 ma 2.5 5.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 VDSS TJ = 25°C
VGS = 0 TJ = 125°C
50
1
µA
mA
RDS(on) VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
0.41
Ω
gfs VDS = 15 V, ID = 0.5ID25, pulse test 27 S
TJ -55 +175 °C
TJM 175 °C
Tstg -55 +175 °C
TL 1.6mm (0.063 in) from case for 10 s 300 °C
Weight 3 g
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other haz-
ardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 30MHz
• Easy to mount—no insulators needed
• High power density
♦ N-Channel Enhancement Mode
♦ Low Qg and Rg
♦ High dv/dt
♦ Nanosecond Switching
♦ 30MHz Maximum Frequency
DRAIN
SG1 SG2
GATE
SD1 SD2
DE475-102N21A
RF Power MOSFET
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
RG 0.3 Ω
Ciss 5500 pF
Coss VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz 200 pF
Crss 60 pF
Cstray Back Metal to any Pin 46 pF
Td(on) 5 ns
Ton VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 Ω (External)
5 ns
Td(off) 5 ns
Toff 8 ns
Qg(on) 160 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25 35 nC
Qgd 77 nC
Source-Drain Diode Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions min. typ. max.
IS VGS = 0 V 21 A
ISM Repetitive; pulse width limited by TJM 144 A
VSD 1.5 V
Trr
200 ns
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
QRM IF = IS, -di/dt = 100A/µs,
VR = 100V
0.6
µC
IRM 8 A
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
For detailed device mounting and installation instructions, see the “DE-
Series MOSFET Mounting Instructions” technical note on IXYS RF’s web
site at www.ixysrf.com/Technical_Support/App_notes.html
DE475-102N21A
RF Power MOSFET
10
100
1000
10000
0 100 200 300 400 500 600 700 800 900 1000
Vds in Volts
Capacitance in p
F
Cis s
Cos s
Cr s s
475-102N21A Capacitances vs Vds
DE475-102N21A
RF Power MOSFET
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com
102N21A DE-SERIES SPICE Model (Preliminary)
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expan-
sion of the SPICE level 3 MOSFET model. It includes the stray inductive terms
LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term.
The output capacitance, COSS, and reverse transfer capacitance, CRSS are mod-
eled with reversed biased diodes. This provides a varactor type response neces-
sary for a high power device model. The turn on delay and the turn off delay are
adjusted via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
.SUBCKT 102N21A 10 20 30
* TERMINALS: D G S
* 1000 Volt 21 Amp 0.41 ohm N-Channel Power MOSFET
* REV.A 01-09-02
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 0.3
DON 6 2 D1
ROF 5 7 .1
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 5.5N
RD 4 1 0.41
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0247 Rev 4
© 2003 IXYS RF
