Product Datasheet Search Results:
8 Pages, 211 KB, Original- CFY67-08P
- Infineon Technologies Ag
- K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
9 Pages, 37 KB, Original- CFY67-08PES
- Infineon Technologies
- Discrete, HiRel K-Band GaAs Super Low Noise HEMT
9 Pages, 37 KB, Original- CFY67-08PH
- Infineon Technologies
- Discrete, HiRel K-Band GaAs Super Low Noise HEMT
10 Pages, 52 KB, Original- CFY67-08P (P)
- Infineon Technologies
- HiRel GaAs Microwave Devices; Package: --; Package: Micro-X; I<sub>DS</sub> (max): 60.0 mA; V<sub>DS</sub> (min): 3.5 V; NF(typ)@12GHz: 0.7 dB; P<sub>OUT</sub>: -;
8 Pages, 211 KB, Original- CFY67-08PP
- Infineon Technologies Ag
- K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
9 Pages, 37 KB, Original- CFY67-08PS
- Infineon Technologies
- Discrete, HiRel K-Band GaAs Super Low Noise HEMT
9 Pages, 158 KB, Scan- CFY67-08PES
- Triquint
- K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
9 Pages, 158 KB, Scan- CFY67-08PH
- Triquint
- K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
9 Pages, 158 KB, Scan- CFY67-08PS
- Triquint
- K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
Product Details Search Results:
Infineon.com/CFY67-08P
{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"11 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package...
1428 Bytes - 04:18:21, 08 January 2025
Infineon.com/CFY67-08PP
{"Terminal Finish":"MATTE TIN","Terminal Form":"FLAT","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"11 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"SOURCE","Mfr Package...
1436 Bytes - 04:18:21, 08 January 2025
Triquint.com/CFY67-08PES
{"Terminal Finish":"GOLD","Terminal Form":"FLAT","Package Shape":"UNSPECIFIED","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"11 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"S...
1433 Bytes - 04:18:21, 08 January 2025
Triquint.com/CFY67-08PH
{"Terminal Finish":"GOLD","Terminal Form":"FLAT","Package Shape":"UNSPECIFIED","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"11 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"S...
1427 Bytes - 04:18:21, 08 January 2025
Triquint.com/CFY67-08PS
{"Terminal Finish":"GOLD","Terminal Form":"FLAT","Package Shape":"UNSPECIFIED","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"GALLIUM ARSENIDE","Power Gain-Min (Gp)":"11 dB","Drain Current-Max (ID)":"0.0600 A","Configuration":"SINGLE","Transistor Type":"RF SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"HIGH ELECTRON MOBILITY","DS Breakdown Voltage-Min":"3.5 V","Transistor Application":"AMPLIFIER","Surface Mount":"Yes","Case Connection":"S...
1424 Bytes - 04:18:21, 08 January 2025
