CFY67
Semiconduc tor Gr oup 1 of 9 Draft D , Jul. 98
HiRel
K-Band
GaAs Super Low Noise HEMT
•
HiRel
Discrete and Microwave
Semiconductor
• Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT
• For professional super low-noise amplifiers
• For frequencies from 500 MHz to > 20 GHz
• Hermetically sealed microwave package
• Super low noise figure, high associated gain
• Space Qualified
ESA/SCC Detail Spec. No.: 5613/004,
Type Variant No.s 01 to 04, 05 foreseen (tbc.)
12
34
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
1234
CFY67-06 (ql)
CFY67-08 (ql)
CFY67-08P (ql)
CFY67-10 (ql)
CFY67-10P (ql)
- see below G S D S Micro-X
CFY67-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1699
H: High Rel Quality, Ordering Code: on request
S: Space Quality, Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702F1699
(see order instructions for ordering example)
CFY67
Semiconduc tor Gr oup 2 of 9 Draft D , Jul. 98
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage VDS 3.5 V
Drain-gate voltage VDG 4.5 V
Gate-source voltage (reverse / forward) VGS - 3... + 0.5 V
Drain current ID60 mA
Gate forward current IG2mA
RF Input Power, C- and X-Band 1) PRF,in + 10 dBm
Junction temperature TJ150 °C
Storage temperature range Tstg - 65... + 150 °C
Total power dissipation 2) Ptot 200 mW
Soldering temperature 3) Tsol 230 °C
Thermal Resistance
Junction-soldering point Rth JS ≤ 515 (tbc.) K/W
Notes.:
1) For VDS ≤ 2 V. For VDS > 2 V, derating is required.
2) At TS = + 47 °C. For TS > + 47 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered unt il 3 minutes have
elapsed.
CFY67
Semiconduc tor Gr oup 3 of 9 Draft D , Jul. 98
Electrical Characteristics (at TA=25°C; unless otherwise specified)
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Drain-source saturation current
VDS = 2 V, VGS = 0 V IDss 15 30 60 mA
Gate threshold voltage
VDS = 2 V, ID = 1 mA -VGth 0.2 0.7 2.0 V
Drain current at pinch-off
VDS = 1.5 V, VGS = - 3 V IDp - < 50 - µA
Gate leakage current at pinch-off
VDS = 1.5 V, VGS = - 3 V -IGp - < 50 200 µA
Transconductance
VDS = 2 V, ID = 15 mA gm15 50 65 - mS
Gate leakage current at operation
VDS = 2 V, ID = 15 mA -IG15 - < 0.5 2 µA
Thermal resistance
junction to soldering point Rth JS - 450 - K/W
CFY67
Semiconduc tor Gr oup 4 of 9 Draft D , Jul. 98
Electrical Characteristics (continued)
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Noise figure 1)
VDS = 2 V, ID = 15 mA, f = 12 GHz NF dB
CFY67-06 - 0.5 0.6
CFY67-08, -08P - 0.7 0.8
CFY67-10, 10P - 0.9 1.0
Associated gain. 1)
VDS = 2 V, ID = 15 mA, f = 12 GHz GadB
CFY67-06 11.5 12.5 -
CFY67-08, -08P 11.0 11.5 -
CFY67-10, 10P 10.5 11.0 -
Output power at 1 dB gain compression 2)
VDS = 2 V, ID = 20 mA, f = 12 GHz P1dB dBm
CFY67-06, -08, -10 - 11.0 -
CFY67-08P, -10P 10.0 11.0 -
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power characteristics given for optimum output power matching conditions (fixed
generic matching, no fine-tuning).
CFY67
Semiconduc tor Gr oup 5 of 9 Draft D , Jul. 98
Typical Common Source S-Parameters
CFY67-08: VDS = 2 V, ID = 15 m A, Zo = 50 Ω
f |S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S
21
/S
12
MAG
[GHz] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [dB] [dB]
0,5 0,963 -15 5,315 165 0,0111 74 0,655 -14 0,40 26,8
1,0 0,938 -23 5,182 159 0,0225 68 0,639 -18 0,39 23,6
1,5 0,913 -33 5,060 150 0,0317 62 0,625 -23 0,42 22,0
2,0 0,889 -42 4,940 142 0,0411 57 0,611 -28 0,43 20,8
2,5 0,865 -52 4,824 133 0,0509 53 0,596 -35 0,43 19,8
3,0 0,844 -62 4,715 124 0,0585 46 0,582 -41 0,45 19,1
3,5 0,823 -72 4,591 115 0,0650 41 0,567 -47 0,47 18,5
4,0 0,800 -81 4,450 107 0,0714 36 0,552 -53 0,50 17,9
4,5 0,779 -91 4,319 99 0,0768 31 0,534 -60 0,52 17,5
5,0 0,761 -100 4,183 91 0,0811 25 0,520 -66 0,54 17,1
5,5 0,743 -109 4,043 83 0,0850 20 0,500 -72 0,58 16,8
6,0 0,725 -117 3,906 75 0,0885 15 0,490 -77 0,60 16,4
6,5 0,708 -125 3,769 68 0,0917 11 0,477 -83 0,63 16,1
7,0 0,690 -132 3,640 61 0,0942 7 0,467 -88 0,67 15,9
7,5 0,673 -139 3,529 54 0,0962 3 0,455 -93 0,71 15,6
8,0 0,656 -146 3,427 48 0,0978 -1 0,442 -97 0,76 15,4
8,5 0,640 -153 3,344 41 0,0998 -5 0,430 -101 0,79 15,3
9,0 0,625 -160 3,271 34 0,1010 -9 0,417 -104 0,84 15,1
9,5 0,611 -168 3,202 28 0,1027 -12 0,406 -108 0,87 14,9
10,0 0,597 -175 3,143 21 0,1033 -16 0,393 -113 0,91 14,8
10,5 0,586 177 3,089 15 0,1044 -20 0,381 -118 0,94 14,7
11,0 0,576 169 3,041 8 0,1056 -24 0,370 -123 0,96 14,6
11,5 0,564 161 3,002 1 0,1068 -28 0,358 -129 0,98 14,5
12,0 0,554 154 2,960 -5 0,1070 -32 0,351 -134 1,01 14,4 13,8
12,5 0,547 146 2,923 -12 0,1076 -36 0,343 -140 1,03 14,3 13,3
13,0 0,536 139 2,886 -19 0,1076 -41 0,336 -146 1,06 14,3 12,7
13,5 0,529 131 2,848 -26 0,1081 -45 0,330 -151 1,09 14,2 12,4
14,0 0,522 124 2,815 -33 0,1087 -50 0,325 -156 1,11 14,1 12,1
14,5 0,517 116 2,787 -40 0,1087 -55 0,320 -161 1,13 14,1 11,9
15,0 0,510 108 2,765 -46 0,1093 -60 0,315 -167 1,14 14,0 11,7
15,5 0,505 99 2,751 -54 0,1090 -65 0,311 -172 1,16 14,0 11,6
16,0 0,502 91 2,735 -61 0,1090 -71 0,305 -177 1,18 14,0 11,4
16,5 0,499 82 2,719 -68 0,1091 -77 0,301 177 1,19 14,0 11,3
17,0 0,498 74 2,722 -75 0,1097 -82 0,297 172 1,19 13,9 11,3
17,5 0,498 68 2,741 -80 0,1103 -87 0,294 168 1,18 14,0 11,4
18,0 0,498 62 2,760 -84 0,1107 -90 0,290 165 1,17 14,0 11,5
CFY67
Semiconduc tor Gr oup 6 of 9 Draft D , Jul. 98
Typical Common Source S-Parameters (continued)
CFY67-06: VDS = 2 V, ID = 15 m A, Zo = 50 Ω
f |S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S
21
/S
12
MAG
[GHz] [mag] [ang] [mag] [ang] [mag] [ang] [mag] [ang] [mag] [dB] [dB]
0,5 0,962 -13 6,112 166 0,0111 76 0,539 -15 0,42 27,4
1,0 0,937 -22 5,956 159 0,0211 69 0,525 -19 0,42 24,5
1,5 0,913 -33 5,810 150 0,0302 64 0,511 -24 0,44 22,8
2,0 0,889 -41 5,690 142 0,0394 58 0,498 -30 0,46 21,6
2,5 0,860 -51 5,522 133 0,0484 53 0,484 -36 0,48 20,6
3,0 0,834 -61 5,386 124 0,0567 48 0,469 -43 0,50 19,8
3,5 0,810 -71 5,236 116 0,0637 43 0,456 -49 0,52 19,1
4,0 0,784 -80 5,067 107 0,0702 38 0,440 -55 0,55 18,6
4,5 0,761 -90 4,911 99 0,0760 33 0,423 -61 0,58 18,1
5,0 0,740 -99 4,752 91 0,0809 28 0,410 -67 0,60 17,7
5,5 0,720 -107 4,586 84 0,0851 24 0,397 -73 0,63 17,3
6,0 0,701 -116 4,420 76 0,0889 19 0,385 -79 0,66 17,0
6,5 0,682 -124 4,260 69 0,0918 15 0,373 -84 0,69 16,7
7,0 0,663 -131 4,107 62 0,0941 11 0,362 -89 0,73 16,4
7,5 0,644 -139 3,974 55 0,0962 7 0,351 -93 0,77 16,2
8,0 0,627 -148 3,852 49 0,0980 3 0,343 -98 0,80 15,9
8,5 0,611 -157 3,747 42 0,0995 -1 0,333 -102 0,83 15,8
9,0 0,595 -165 3,659 35 0,1008 -5 0,323 -107 0,86 15,6
9,5 0,581 -173 3,571 29 0,1022 -9 0,313 -112 0,90 15,4
10,0 0,567 178 3,497 22 0,1039 -13 0,303 -116 0,92 15,3
10,5 0,556 170 3,430 16 0,1049 -17 0,293 -121 0,95 15,1
11,0 0,546 163 3,368 9 0,1064 -21 0,284 -127 0,98 15,0
11,5 0,537 155 3,317 3 0,1078 -26 0,274 -131 1,00 14,9
12,0 0,528 149 3,265 -4 0,1093 -30 0,265 -135 1,02 14,8 13,8
12,5 0,520 142 3,216 -10 0,1105 -35 0,255 -139 1,05 14,6 13,3
13,0 0,513 135 3,169 -17 0,1116 -39 0,246 -143 1,07 14,5 12,9
13,5 0,506 128 3,120 -24 0,1126 -44 0,235 -146 1,10 14,4 12,5
14,0 0,498 121 3,080 -30 0,1137 -49 0,225 -150 1,12 14,3 12,2
14,5 0,492 113 3,044 -37 0,1151 -54 0,215 -155 1,14 14,2 12,0
15,0 0,489 106 3,014 -44 0,1160 -59 0,207 -159 1,15 14,1 11,8
15,5 0,484 98 2,990 -51 0,1171 -65 0,200 -163 1,16 14,1 11,6
16,0 0,485 91 2,967 -58 0,1185 -71 0,193 -167 1,17 14,0 11,5
16,5 0,485 83 2,945 -65 0,1197 -77 0,187 -171 1,17 13,9 11,4
17,0 0,485 75 2,947 -71 0,1206 -82 0,182 -175 1,17 13,9 11,4
17,5 0,487 69 2,961 -77 0,1215 -87 0,177 -178 1,16 13,9 11,5
18,0 0,490 64 2,979 -81 0,1230 -90 0,174 179 1,14 13,8 11,6
CFY67
Semiconduc tor Gr oup 7 of 9 Draft D , Jul. 98
Typical Common Source Noise-Parameters
CFY67-08: VDS = 2 V, ID = 15 m A, Zo = 50 Ω
fNF
min
|Γopt|<Γopt R
n
[GHz] [dB] [magn] [angle] [Ω]
1 0,29 0,756 14 15,60
2 0,30 0,690 28 14,65
3 0,34 0,643 43 13,56
4 0,38 0,606 58 12,10
5 0,41 0,578 73 10,53
6 0,46 0,553 87 8,86
7 0,50 0,534 102 7,16
8 0,55 0,518 116 5,62
9 0,60 0,505 131 4,29
10 0,64 0,495 145 3,23
11 0,69 0,486 159 2,53
12 0,73 0,476 173 2,22
13 0,78 0,467 -173 2,37
14 0,84 0,455 -160 2,96
15 0,88 0,443 -146 4,01
16 0,93 0,428 -132 5,47
17 0,99 0,412 -118 7,26
18 1,05 0,394 -103 9,61
CFY67
Semiconduc tor Gr oup 8 of 9 Draft D , Jul. 98
Order Instructions:
Full type variant including quality level must be specified by the orderer. For
HiRel
Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level
only.
Ordering Form: Ordering Code: Q..........
CFY67 -(nnl) (ql)
-(nnl) Noise Figure/Gain and/or Power Level
(ql): Quality Level
Ordering Example: Ordering Code: Q62702F1698
CFY67-08P ES
For CFY67, Noise Figure/Gain/Power Level 08P:
NF < 0.8 dB, Ga > 11.0 dB, P1dB > 10 dBm @ 12 GHz
in ESA Space Quality Level
Further Informations:
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
-
HiRel
Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division :
Tel.: ++89 6362 4480
Fax.: ++89 6362 5568
e-mail: martin.wimmers@siemens-scg.com
Address: Siemens Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
CFY67
Semiconduc tor Gr oup 9 of 9 Draft D , Jul. 98
Micro-X Package Published by Siemens Semiconductors, High Frequency
Products Marketing, P.O.Box 801709, D-81617 Munich.
Siemens AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per se,
not for applications, processes and circuits implemented
within components or assemblies.
The information describes the type of component and shall
not be considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany or
the Siemens Companies and Representatives woldwide
(see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Siemens Office,
Semiconductor Group.
Siemens Semiconductors is a certified CECC and QS9000
manufacturer (this includes ISO 9000).
