Product Datasheet Search Results:
9 Pages, 101 KB, Original- BUZ80
- Infineon Technologies
- N-Channel SIPMOS Power Transistor, 800V, TO-220, 4.00 ?, 3.1A
9 Pages, 89 KB, Original- BUZ80A
- Infineon Technologies
- MOSFET N-CH 800V 3.6A TO-220AB - BUZ80A
7 Pages, 219 KB, Original- BUZ80
- Philips Semiconductors / Nxp Semiconductors
- PowerMOS Transistor
7 Pages, 218 KB, Original- BUZ80A
- Philips Semiconductors / Nxp Semiconductors
- PowerMOS Transistor
5 Pages, 196 KB, Scan- BUZ80
- Siemens Semiconductors
- Power Transistors
9 Pages, 114 KB, Original- BUZ80A
- Siemens Semiconductors
- SIPMOS Power Transistor (N channel Enhancement mode)
Product Details Search Results:
Infineon.com/BUZ80A
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Input Capacitance (Ciss) @ Vds":"1350pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"500","Supplier Device Package":"PG-TO220-3","Datasheets":"BUZ80A","Rds On (Max) @ Id, Vgs":"3 Ohm @ 2A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"100W","Package / Case":"TO-220-3","Mounting Type":"Through Hole","Drain to Sou...
1517 Bytes - 13:45:23, 18 February 2025
St.com/BUZ80
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"180 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.4 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"13 A","Channel Type":"N-CHANNEL","FET Tech...
1484 Bytes - 13:45:23, 18 February 2025
St.com/BUZ80A
{"Terminal Finish":"MATTE TIN","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"200 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"3.8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"3 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"15 A","Channel Type":"N-CHANNEL","FET Tech...
1492 Bytes - 13:45:23, 18 February 2025
