BUZ 80 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 80 800 V 3.1 A 4 TO-220 AB C67078-S1309-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 28 C Values Unit A 3.1 Pulsed drain current IDpuls TC = 25 C 12.5 Avalanche current,limited by Tjmax IAR 3.1 Avalanche energy,periodic limited by Tjmax E AR 8 Avalanche energy, single pulse E AS mJ ID = 3.1 A, VDD = 50 V, RGS = 25 L = 62.4 mH, Tj = 25 C 320 Gate source voltage V GS Power dissipation P tot TC = 25 C 20 W 100 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC 1.25 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 C K/W E IEC climatic category, DIN IEC 68-1 Semiconductor Group V 55 / 150 / 56 1 09/96 BUZ 80 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 800 - - V GS(th) V GS=V DS, ID = 1 mA Zero gate voltage drain current V V (BR)DSS 2.1 3 4 A IDSS V DS = 800 V, V GS = 0 V, Tj = 25 C - 0.1 1 V DS = 800 V, V GS = 0 V, Tj = 125 C - 10 100 Gate-source leakage current V GS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) V GS = 10 V, ID = 2 A Semiconductor Group nA IGSS - 2 3.5 4 09/96 BUZ 80 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance V DS 2 * ID * RDS(on)max, ID = 2 A Input capacitance 1 pF - 900 1350 - 95 140 - 50 75 Crss V GS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time - Coss V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance 3.6 Ciss V GS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance S gfs ns td(on) V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time - 15 25 - 65 85 - 200 270 - 65 85 tr V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 09/96 BUZ 80 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current TC = 25 C Inverse diode direct current,pulsed - - 12.5 V 1 1.3 ns trr - 370 C Qrr - V R = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 3.1 - V R = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - V SD V GS = 0 V, IF = 6.2 A Reverse recovery time ISM TC = 25 C Inverse diode forward voltage A IS 4 2.5 - 09/96 BUZ 80 Drain current ID = (TC) parameter: VGS 10 V Power dissipation Ptot = (TC) 3.2 110 W Ptot A 90 ID 2.4 80 2.0 70 60 1.6 50 1.2 40 30 0.8 20 0.4 10 0.0 0 0 20 40 60 80 100 120 C 0 160 20 40 60 80 100 120 TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C C 160 TC Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 10 2 K/W A ID ZthJC 10 0 t = 18.0s p 10 1 10 -1 100 s D = 0.50 0.20 0.10 =V 0 0.05 DS (on ) 10 10 -2 DS /I D 1 ms 10 ms R 10 -3 10 -1 0 10 10 1 10 2 DC 3 V 10 10 -4 -7 10 VDS Semiconductor Group 0.02 single pulse 10 -6 10 -5 0.01 10 -4 10 -3 10 -2 10 -1 tp 5 09/96 s 10 0 BUZ 80 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 7.0 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 13 Ptot = 100W A kj i h l g 6.0 ID 5.0 b 4.5 5.0 5.5 e 6.0 f 6.5 g 7.0 d h 7.5 3.5 2.5 c 2.0 4.0 c 4.0 3.0 a d e 4.5 i 8.0 j 9.0 k 10.0 l 20.0 RDS (on) c d e 10 9 8 7 6 f 5 g h i j k 4 3 1.5 b 2 1.0 VGS [V] = 1 a 0.5 0.0 b 11 V [V] f GS 5.5 a a 4.0 4.5 b 5.0 c 5.5 d 6.0 f e 6.5 7.0 g 7.5 i k h j 8.0 9.0 10.0 20.0 0 0 10 20 30 40 V 60 0.0 1.0 2.0 3.0 4.0 5.0 VDS A 6.5 A 4.0 ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s parameter: tp = 80 s, VDS2 x ID x RDS(on)max V DS2 x ID x RDS(on)max 5.0 3.0 A ID S 4.0 gfs 3.5 2.0 3.0 2.5 1.5 2.0 1.0 1.5 1.0 0.5 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ID 6 09/96 BUZ 80 Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 2 A, VGS = 10 V 19 4.6 V 98% 4.0 16 VGS(th) RDS (on) 3.6 14 typ 3.2 12 2.8 10 2.4 2% 2.0 8 1.6 98% typ 6 1.2 4 0.8 2 0.4 0 0.0 -60 -20 20 60 100 C -60 160 -20 20 60 100 C Tj Typ. capacitances 160 Tj Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C Ciss 10 0 10 1 10 -1 10 0 Coss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Crss 10 -2 0 5 10 15 20 25 30 V Tj = 150 C (98%) 40 VDS Semiconductor Group 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VSD 7 09/96 3.0 BUZ 80 Avalanche energy EAS = (Tj) parameter: ID = 3.1 A, VDD = 50 V RGS = 25 , L = 62.4 mH Typ. gate charge VGS = (QGate) parameter: ID puls = 5 A 340 16 mJ V EAS 280 VGS 12 240 10 0,2 VDS max 200 8 160 6 120 80 4 40 2 0 20 0,8 VDS max 0 40 60 80 100 120 C 160 Tj 0 10 20 30 40 50 nC Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 960 V 920 V(BR)DSS 900 880 860 840 820 800 780 760 740 720 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 09/96 70 BUZ 80 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 09/96