Datasheet.Directory

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3600 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3300 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","China RoHS Compliant":"Yes","FET Techno...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"2 Ohm @ 330mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 80\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT23-3","Other Names":"BSS83PE6327INCT BSS83PE6327XTINCT BSS83PE6327XTINCT-ND","Packaging":"Cut Tape (CT)","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"BSS83P","Power - Max":"360mW","Package / Case":"TO-236...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 80\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"330mA (Ta)","Gate Charge (Qg) @ Vgs":"3.57nC @ 10V","Product Photos":"SOT-23-3","Rds On (Max) @ Id, Vgs":"2 Ohm @ 330mA, 10V","Datasheets":"BSS83P","FET Type":"MOSFET P-Channel, Metal Oxide","PCN Packaging":"Carrier Tape Update 03/Jun/2015","Drain to Source Voltage (Vdss)":"60V","Standard Package":"1",...

{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"GREEN, PLASTIC PACKAGE-3","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3600 W","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"0.3300 A","Transistor Element Material":"SILICON","Operating Mode":"ENHANCEMENT","Number of Elements":"1","Feedback Cap-Max (Crss)":"9 pF","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOS...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"- 60 V","Transistor Polarity":"P-Channel","Qg - Gate Charge":"2.38 nC","Package / Case":"SOT-23-3","Part # Aliases":"BSS83PH6327XTSA1 SP000702486","Fall Time":"64 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Manufacturer":"Infineon","Id - Continuous Drain Current":"- 330 mA","Rds On - Dra...

{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.33(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Power Dissipation":"0.36(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Rad Hardened":"No","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"2 Ohm @ 330mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 80\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"3,000","Supplier Device Package":"PG-SOT23-3","Other Names":"BSS83PL6327HTSA1","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"BSS83P","Power - Max":"360mW","Package / Case":"TO-236-3, SC-59, SOT-23-3","Mounting ...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"2 Ohm @ 330mA, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT-23-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 80\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT23-3","Other Names":"BSS83PL6327DKR","Packaging":"Digi-Reel\u00ae","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"BSS83P","Power - Max":"360mW","Package / Case":"TO-236-3, SC-59, SOT-23-3","Mounting Type":"...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3600 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.3300 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"2 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage...