BSS83PL6327 - Infineon Technologies

2011-06-01

Rev. 1.3 Page 1

BSS 83 P

SIPMOS Small-Signal-Transistor

Features

·

P-Channel

·

Enhancement mode

·

Avalanche rated

·

Logic Level

·

d

v

/d

t

rated

Product Summary

Drain source voltage V

V

DS -60

Drain-source on-state resistance

R

DS(on) 2

W

Continuous drain current A

I

D-0.33

1

2

3

VPS05161

Type

Package

Tape and Reel

BSS 83 P

PG-SOT-23

L6327: 3000pcs/r.

Marking

YAs

Pin 1

PIN 2

PIN 3

G

S

D

Maximum Ratings,at

T

j = 25 °C, unless otherwise specified

Parameter Symbol Unit

Value

-0.33

-0.27

A

Continuous drain current

T

A

= 25 °C

T

A

= 70 °C

I

D

Pulsed drain current

T

A

= 25 °C

I

D puls

-1.32

Avalanche energy, single pulse

I

D

= -0.33 A ,

V

DD

= -25 V,

R

GS

= 25

W

9.5 mJ

E

AS

Avalanche energy, periodic limited by

T

jmax

E

AR

0.036

d

v

/d

t

6

Reverse diode d

v

/d

t

I

S

= -0.33 A,

V

DS

= -48 V, d

i

/d

t

= 200 A/µs,

T

jmax

= 150 °C

kV/µs

Gate source voltage

V

GS

±

20 V

Power dissipation

T

A

= 25 °C

P

tot 0.36 W

Operating and storage temperature

T

j ,

T

stg

-55...+150

°C

IEC climatic category; DIN IEC 68-1

55/150/56

2011-06-01

Rev. 1.3 Page 2

BSS 83 P

Thermal Characteristics

Parameter Symbol UnitValues

min. max.typ.

Characteristics

Thermal resistance, junction - soldering point

( Pin 3 ) 150 K/W-

R

thJS -

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

R

thJA

-

350

300

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

GS = 0 V,

I

D = -250 µA

V

(BR)DSS -60 - V-

Gate threshold voltage,

V

GS =

V

DS

I

D = -80 µA -1 -1.5 -2

V

GS(th)

Zero gate voltage drain current

V

DS = -60 V,

V

GS = 0 V,

T

j = 25 °C

V

DS = -60 V,

V

GS = 0 V,

T

j = 125 °C

µA

-1

-100

I

DSS

-0.1

-10

-

I

GSS - -10 -100Gate-source leakage current

V

GS = -20 V,

V

DS = 0 V nA

Drain-source on-state resistance

V

GS = -4.5 V,

I

D = -0.27 A

R

DS(on) - 2 3

W

Drain-source on-state resistance

V

GS = -10 V,

I

D = -0.33 A

R

DS(on) - 1.4 2

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2011-06-01

Rev. 1.3 Page 3

BSS 83 P

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

V

DS

³

2*

I

D*

R

DS(on)max ,

I

D = -0.27 A 0.24

g

fs S-0.47

Input capacitance

V

GS = 0 V,

V

DS = -25 V,

f

= 1 MHz

C

iss 62 78 pF-

C

oss - 2419Output capacitance

V

GS = 0 V,

V

DS = -25 V,

f

= 1 MHz

Reverse transfer capacitance

V

GS = 0 V,

V

DS = -25 V,

f

= 1 MHz 97

C

rss -

Turn-on delay time

V

DD = -30 V,

V

GS = -4.5 V,

I

D = -0.27 A,

R

G = 43

W

- 35 ns23

t

d(on)

Rise time

V

DD = -30 V,

V

GS = -4.5 V,

I

D = -0.27 A,

R

G = 43

W

t

r- 10671

56 70

t

d(off)

Turn-off delay time

V

DD = -30 V,

V

GS = -4.5 V,

I

D = -0.27 A,

R

G = 43

W

-

Fall time

V

DD = -30 V,

V

GS = -4.5 V,

I

D = -0.27 A,

R

G = 43

W

t

f- 61 76

2011-06-01

Rev. 1.3 Page 4

BSS 83 P

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified Unit

ValuesSymbolParameter

min. typ. max.

Dynamic Characteristics

Gate to source charge

V

DD = -48 V,

I

D = -0.33 A -

Q

gs nC0.180.12

Gate to drain charge

V

DD = -48 ,

I

D = -0.33 A

Q

gd 1.1 1.65-

3.57-

Q

g

Gate charge total

V

DD = -48 V,

I

D = -0.33 A,

V

GS = 0 to -10 V 2.38

Gate plateau voltage

V

DD = -48 V ,

I

D = -0.33 A

V

(plateau) - -2.94 - V

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

A = 25 °C

I

S- - -0.33 A

Inverse diode direct current,pulsed

T

A = 25 °C

I

SM - - -1.32

Inverse diode forward voltage

V

GS = 0 V,

I

F = -0.33

V

SD - -0.84 -1.1 V

Reverse recovery time

V

R = -30 V,

I

F=

I

S , d

i

F/d

t

= 80 A/µs

t

rr - 59.4 89 ns

Reverse recovery charge

V

R = -30 V,

I

F=

l

S , d

i

F/d

t

= 80 A/µs

Q

rr - 37.5 56 nC

2011-06-01

Rev. 1.3 Page 5

BSS 83 P

Drain current

I

D =

f

(

T

A)

parameter:

V

GS

³

10 V

0 20 40 60 80 100 120 °C 160

T

A

0.00

-0.04

-0.08

-0.12

-0.16

-0.20

-0.24

-0.28

A

-0.36 BSS 83 P

I

D

Power Dissipation

P

tot =

f

(

T

A)

0 20 40 60 80 100 120 °C 160

T

A

0.00

0.04

0.08

0.12

0.16

0.20

0.24

0.28

0.32

W

0.38 BSS 83 P

P

tot

Transient thermal impedance

Z

thJC =

f

(

t

p)

parameter :

D

=

t

p/

T

10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4

s

t

p

-1

10

0

10

1

10

2

10

3

10

K/W

BSS 83 P

Z

thJC

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

Safe operating area

I

D =

f

(

V

DS )

parameter :

D

= 0 ,

T

A = 25 °C

-10 -1 -10 0 -10 1 -10 2

V

DS

-3

-10

-2

-10

-1

-10

0

-10

1

-10

A

BSS 83 P

I

D

R

DS(on)

=

V

DS

/

I

D

DC

10 ms

1 ms

100 µs

t

p = 88.0µs

2011-06-01

Rev. 1.3 Page 6

BSS 83 P

Typ. drain-source-on-resistance

R

DS(on) =

f

(

I

D)

parameter:

V

GS

0.00 -0.10 -0.20 -0.30 -0.40 -0.50 A-0.65

I

D

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

W

6.5 BSS 83 P

R

DS(on)

a

V

GS [V] =

a

-2.5

b

-3.0

c

-3.5

d

-4.0

e

-4.5

f

-5.0

g

-5.5

h

-6.0

i

-6.5

j

-7.0

k

-8.0

l

-10.0

Typ. output characteristic

I

D =

f

(

V

DS);

T

j=25°C

parameter:

t

p = 80 µs

0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V-5.0

V

DS

0.00

-0.10

-0.20

-0.30

-0.40

-0.50

-0.60

A

-0.80 BSS 83 P

I

D

V

GS [V]

a

a -2.5

b

b -3.0

c

c -3.5

d

d -4.0

e

e -4.5

f

f -5.0

g

g -5.5

h

h -6.0

i

i -6.5

j

j -7.0

k

k -8.0

l

P

tot = 0W

l -10.0

Typ. transfer characteristics

I

D=

f

(

V

GS )

V

DS

³

2 x

I

D x

R

DS(on)max

parameter:

t

p = 80 µs

0.0 -1.0 -2.0 -3.0 -4.0 V-6.0

V

GS

0.0

-0.1

-0.2

-0.3

-0.4

-0.5

-0.6

-0.7

-0.8

-0.9

-1.0

A

-1.2

I

D

Typ. forward transconductance

g

fs = f(

I

D);

T

j=25°C

parameter:

g

fs

0.00 -0.10 -0.20 -0.30 -0.40 -0.50 A-0.70

ID

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

0.55

0.60

S

0.70

gfs

2011-06-01

Rev. 1.3 Page 7

BSS 83 P

Drain-source on-state resistance

R

DS(on) =

f

(

T

j)

parameter :

I

D = -0.33 A,

V

GS = -10 V

-60 -20 20 60 100 °C 180

T

j

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

W

5.5 BSS 83 P

R

DS(on)

typ

98%

Gate threshold voltage

V

GS(th) =

f

(

T

j)

parameter:

V

GS =

V

DS,

I

D = -80 µA

-60 -20 20 60 100 °C 160

T

j

0.0

-0.5

-1.0

-1.5

-2.0

V

-3.0

V

GS(th)

2%

-60 -20 20 60 100 °C 160

T

j

0.0

-0.5

-1.0

-1.5

-2.0

V

-3.0

V

GS(th)

typ

-60 -20 20 60 100 °C 160

T

j

0.0

-0.5

-1.0

-1.5

-2.0

V

-3.0

V

GS(th)

98%

-60 -20 20 60 100 °C 160

T

j

0.0

-0.5

-1.0

-1.5

-2.0

V

-3.0

V

GS(th)

Typ. capacitances

C

=

f

(

V

DS)

parameter:

V

GS=0V,

f

=1 MHz

0 -5 -10 -15 -20 -25 V-35

V

DS

0

10

1

10

2

10

3

10

pF

C

iss

C

oss

C

rss

Forward characteristics of reverse diode

I

F =

f

(VSD)

parameter:

T

j , tp = 80 µs

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V-3.0

V

SD

-2

-10

-1

-10

0

-10

1

-10

A

BSS 83 P

I

F

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 150 °C typ

T

j = 150 °C (98%)

2011-06-01

Rev. 1.3 Page 8

BSS 83 P

Avalanche energy

E

AS =

f

(

T

j)

para.:

I

D = -0.33 A ,

V

DD = -25 V,

R

GS = 25

25 45 65 85 105 125 °C 165

T

j

0

1

2

3

4

5

6

7

8

mJ

10

E

AS

Typ. gate charge

V

GS =

f

(

Q

Gate)

parameter:

I

D = -0.33 A pulsed

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 nC 3.4

Q

Gate

0

-2

-4

-6

-8

-10

-12

V

-16 BSS 83 P

V

GS

DS max

V

0,8

DS max

V

0,2

Drain-source breakdown voltage

V

(BR)DSS =

f

(

T

j)

-60 -20 20 60 100 °C 180

T

j

-54

-56

-58

-60

-62

-64

-66

-68

V

-72 BSS 83 P

V

(BR)DSS

2011-06-01

Rev. 1.3 Page 9

BSS 83 P

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

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The information herein is given to describe certain components and shall not be considered as warranted

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,

regarding circuits, descriptions and charts stated herein.

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