Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.3600 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1700 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"6 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Applica...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1700 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"10 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":"SWITCHIN...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SOT23","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Input Capacitance (Ciss) @ Vds":"60pF @ 25V","Series":"-","Standard Package":"1","Supplier Device Package":"SOT-23-3","Datasheets":"BSS123 Datasheet","Rds On (Max) @ Id, Vgs":"6 Ohm @ 170mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Cut Tape (CT)","Power - Max":"300mW","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Mounting Type":"Surfac...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2V @ 1mA","Catalog Drawings":"SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT23","PCN Assembly\/Origin":"Plating Site Addition 29\/Jul\/2015","PCN Design\/Specification":"Green Encapsulate 15\/May\/2008 Bond Wire 3\/May\/2011","Rds On (Max) @ Id, Vgs":"6 Ohm @ 170mA, 10V","Datasheets":"BSS123 Datasheet","...

{"Category":"MOSFET","Maximum Drain Source Voltage":"100 V","Typical Turn-Off Delay Time":"13(Max) ns","Description":"Value","Maximum Continuous Drain Current":"0.17 A","Package":"3SOT-23","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"8(Max) ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"6000@10V mOhm","Manufacturer":"Diodes, Inc","Typical Fall Time":"16(Max) ns"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"2V @ 1mA","Other Drawings":"SOT-23 Top","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"170mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT23","Rds On (Max) @ Id, Vgs":"6 Ohm @ 170mA, 10V","Datasheets":"BSS123A Datasheet","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","PCN Obsolescence\/ EOL":"Discrete ...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"SOT23","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"-","Standard Package":"10,000","Supplier Device Package":"SOT-23-3","Datasheets":"BSS123A Datasheet","Rds On (Max) @ Id, Vgs":"6 Ohm @ 170mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"360mW","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Mounting Type":"Surface Mount","Drain to Source Voltage (Vd...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...

{"Status":"ACTIVE","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL"}...