CORPORATION a N-Channel! Enhancement Mode Vertical DMOS FET FEATURES @ Compact Geometry @ Fast Switching Speeds @ No Secondary Breakdown @ Excellent Temperature Stability @ High Input Impedance @ Low Current Drive @ Ease of Paralleling APPLICATIONS @ Small Motor Drivers @ Switches @ Amplifiers ORDERING INFORMATION BSST00L /BSS123 | TO-92 BSS123 5 G cbs D Part Package Temperature Range BOTTOM o, SSS, Rae CECE Tige | [Troowerwnmmne] sre XBSS123 Sorted Chips in Carriers -55C to +150C BSS123 vi2 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETERS BSS100L BSS123 UNITS Vps Drain-Source Voltage 100 100 Vv Ip Continuous Drain Current (@ Ta = 25C) 170 170 mA lom Pulsed Drain Current 680 680 mA Ves Gate-Source Voltage +20 +20 Vv Pp Max. Power Dissipation (@ Ta = 25C) 2 0.36 Ww Ta, Tstg Operating/Storage Temperature Range -50 to +150 -55 to +150 C Me 1444322 0000994 9uR me 9-5 BSS100L /BSS123 ELECTRICAL CHARACTERISTICS (Tamp = 25C unless otherwise noted) calogic SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS BVpss Drain-Source Breakdown Voltage 100 Vv Ip = 0.25mA, Vas = OV Vasith) Gate-Source Threshold Voltage 0.8 2.2 28 Vv Ip = 1mA, Vps = Vas less Gate-Body Leakage 10 50 nA Vas = 20V, Vos = 0V 1 15 HA Vos = 100V, Vas = OV, T = 25C Ipss Zero Gate Voltage Drain Current 2 50 pA Vps = 100V, Ves = OV, T = 125C? 10 nA Vps = 20V, Ves = OV, T = 25C Ros(on) Static Drain-Source On-State Resistance! 5 6 Q Ip = 100MA, Vas = 10V Gts Forward Transconductance"* 80 120 ms Vos = 25V, Ip = 100mA Ciss Input Capacitance 20 Coss Common Source Output Capacitance 9 pF Vos = 25V, Vas = OV, f = 1MHz Crss Reverse Transfer Capacitance 4 ta(on) Tum-On Delay Time? 10 Rise Time 10 ns | Voo = 30V, In = 280mA ta(OFF) Turn-Off Delay Time* # 15 t Fall Time 3 25 Notes: 1. Measured under pulsed conditions. Width = 300us. Duty cycle <2%. 2. Sample test. 3. Switching times measured with 502 source impedance and <5ns rise time on a pulse generator. MB 1444322 0000995 662 9-6