Datasheet.Directory

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Avalanche Energy Rating (Eas)":"60 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.9 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1200 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"11.6 A","Channel Type":"N-CHANNEL","FET Techn...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"120 mOhm @ 2.9A, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 20\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"1,000","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP320SE6327T SP000011115","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP320S","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mou...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"120 mOhm @ 2.9A, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 20\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"4,000","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP320SE6433T SP000011116","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"BSP320S","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mou...

{"Product Category":"MOSFET","Series":"BSP320","Brand":"Infineon Technologies","Packaging":"Reel","Part # Aliases":"BSP320SH6327XTSA1","RoHS":"Details","Manufacturer":"Infineon"}...

{"Factory Pack Quantity":"1000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Vgs th - Gate-Source Threshold Voltage":"3 V","Qg - Gate Charge":"9.7 nC","Package / Case":"SOT-223-3","Part # Aliases":"SP001058768","Fall Time":"35 ns","Packaging":"Reel","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"Infineon Technologies","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Manufacturer":"Infineon","Forward Transconductance - ...

{"Factory Pack Quantity":"4000","Product Category":"MOSFET","Series":"BSP320","Brand":"Infineon Technologies","Packaging":"Reel","Part # Aliases":"SP001058772","RoHS":"Details","Manufacturer":"Infineon"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 20\u00b5A","Input Capacitance (Ciss) @ Vds":"340pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP320S","Rds On (Max) @ Id, Vgs":"120 mOhm @ 2.9A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mou...

{"Category":"MOSFET","Maximum Drain Source Voltage":"60 V","Typical Turn-Off Delay Time":"25 ns","Description":"Value","Maximum Continuous Drain Current":"2.9 A","Package":"4SOT-223","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"11 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"120@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"35 ns"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 20\u00b5A","Input Capacitance (Ciss) @ Vds":"340pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP320S","Rds On (Max) @ Id, Vgs":"120 mOhm @ 2.9A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mou...