Semiconductor Group 129/01/1998
BSP 320 S
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.1 ... 4.0 V
Pin 1 Pin 2 Pin 3 Pin 4
GDSD
Type VDS IDRDS(on) Package Marking Ordering Code
BSP 320 S 60 V 2.9 A 0.12
Ω
SOT-223 Q67000-S4001
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
TA = 25 °C
TA = 100 °C
ID
1.85
2.9
A
DC drain current, pulsed
TA = 25 °C
IDpuls 11.6
Avalanche energy, single pulse
ID = 2.9 A, VDD = 25 V, RGS = 25
Ω
L = 14.3 mH, Tj = 25 °C
EAS
60
mJ
Avalanche energy, periodic limited by Tj(max) EAR 0.18
Avalanche current, repetitive,limited by Tj(max) IAR 2.9 A
Reverse diode dv/dt
IS = 2.9 A, VDS = 40 V, di/dt = 200 A/µs
Tjmax = 150 °C
dv/dt
6
KV/µs
Gate source voltage VGS
±
20 V
Power dissipation
TA = 25 °C
Ptot 1.8
W
Semiconductor Group 229/01/1998
BSP 320 S
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature Tj -55 ... + 150 °C
Storage temperature Tstg -55 ... + 150
Thermal resistance, chip to ambient air 1) RthJA
≤
70 K/W
Thermal resistance, junction-soldering point 1) RthJS 17
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
*) MIL STD 883, Method 3015, Class 2
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
V(BR)DSS 60 - -
V
Gate threshold voltage
VGS=VDS, ID = 20 µA
VGS(th) 2.1 3 4
Zero gate voltage drain current
VDS = 60 V, VGS = 0 V, Tj = -40 °C
VDS = 60 V, VGS = 0 V, Tj = 25 °C
VDS = 60 V, VGS = 0 V, Tj = 125 °C
IDSS
-
-
-
-
0.1
-
100
1
0.1
µA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
IGSS - 10 100
nA
Drain-Source on-state resistance
VGS = 10 V, ID = 2.9 A
RDS(on) - 0.09 0.12
Ω
Semiconductor Group 329/01/1998
BSP 320 S
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
VDS
≥
2 * ID * RDS(on)max, ID = 2.9 A
gfs 2.5 - -
S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss - 275 340
pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss - 90 120
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss - 50 65
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RG = 33
Ω
td(on)
- 11 17
ns
Rise time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RG = 33
Ω
tr
- 25 40
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RG = 33
Ω
td(off)
- 25 40
Fall time
VDD = 30 V, VGS = 10 V, ID = 2.9 A
RG = 33
Ω
tf
- 35 55
Gate charge at threshold
VDD = 40 V, ID = 0.1 A, VGS 0 to 1 V
Qg(th) - 0.24 0.3
nC
Gate Charge at 7.0 V
VDD = 40 V, ID = 2.9 A, VGS 0 to 7 V
Qg(7) - 7.4 9.3
Gate Charge total
VDD = 40 V, ID = 2.9 A, VGS 0 to 10 V
Qg(total) - 9.7 12
Gate plateau voltage
VDS = 15 V, ID = 2.9 A
V(plateau) - 4.7 -
V
Semiconductor Group 429/01/1998
BSP 320 S
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
TA = 25 °C
IS- - 2.9
A
Inverse diode direct current,pulsed
TA = 25 °C
ISM - - 11.6
Inverse diode forward voltage
VGS = 0 V, IF = 5.8 A
VSD - 0.94 1.2
V
Reverse recovery time
VR = 30 V, IF=lS, diF/dt = 100 A/µs
trr - 45 56
ns
Reverse recovery charge
VR = 30 V, IF=lS, diF/dt = 100 A/µs
Qrr - 0.08 0.12
µC
Semiconductor Group 529/01/1998
BSP 320 S
Power dissipation
Ptot =
ƒ
(TA)
0 20 40 60 80 100 120 °C 160
TA
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
2.0
Ptot
Drain current
ID =
ƒ
(TA)
parameter: VGS
≥
10 V
0 20 40 60 80 100 120 °C 160
TA
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
A
3.0
ID
Safe operating area ID=f(VDS)
parameter : D = 0, TC=25°C Transient thermal impedance
Zth JA =
ƒ
(tp)
parameter: D = tp / T
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
ZthJC
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
tp
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 629/01/1998
BSP 320 S
Typ. output characteristics
ID =
ƒ(
VDS)
parameter: tp = 80 µs , Tj = 25 °C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0
VDS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
A
6.5
ID
VGS [V]
a
a2.5
b
b3.0
c
c3.5
d
d4.0
e
e4.5
f
f5.0
g
g5.5
h
h6.0
i
i7.0
j
j8.0
k
k9.0
l
Ptot = 2W
l10.0
Typ. drain-source on-resistance
RDS (on) =
ƒ(
ID)
parameter: tp = 80 µs, Tj = 25 °C
0.0 1.0 2.0 3.0 4.0 A5.5
ID
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.32
Ω
0.38
RDS (on)
VGS [V] =
a
2.5
VGS [V] =
a
3.0
VGS [V] =
a
3.5
VGS [V] =
a
4.0
VGS [V] =
a
a
4.5
b
b
5.0
c
c
5.5
d
d
6.0
e
e
7.0
f
f
8.0
g
g
9.0
h
h
10.0
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
VDS
≥
2 x ID x RDS(on)max
012345V7
VGS
0
2
4
6
8
10
A
14
ID
Semiconductor Group 729/01/1998
BSP 320 S
Drain-source on-resistance
RDS (on) =
ƒ
(Tj)
parameter: ID = 2.9 A, VGS = 10 V
-60 -20 20 60 100 °C 160
Tj
0.00
0.04
0.08
0.12
0.16
0.20
0.24
Ω
0.32
RDS (on)
typ
98%
Gate threshold voltage
VGS(th) = f ( Tj)
parameter:VGS=VDS, ID =20µA
-60 -20 20 60 100 140 V200
Tj
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
V
5.0
VGS(th)
min
typ
max
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
0 5 10 15 20 25 30 V40
VDS
1
10
2
10
3
10
pF
C
Ciss
Coss
Crss
Forward characteristics of reverse diode
IF =
ƒ
(VSD)
parameter: Tj, tp = 80 µs
-1
10
0
10
1
10
2
10
A
IF
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
VSD
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
Semiconductor Group 829/01/1998
BSP 320 S
Avalanche energy EAS =
ƒ
(Tj)
parameter: ID = 2.9 A, VDD = 25 V
RGS = 25
Ω
, L = 14.3 mH
20 40 60 80 100 120 °C 160
Tj
0
5
10
15
20
25
30
35
40
45
50
55
mJ
65
EAS
Typ. gate charge
VGS =
ƒ
(QGate)
parameter: ID puls = 3 A
0 2 4 6 8 10 14
QGate
0
2
4
6
8
10
12
V
16
VGS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V(BR)DSS =
ƒ
(Tj)
-60 -20 20 60 100 °C 160
Tj
54
56
58
60
62
64
66
68
V
71
V(BR)DSS
