Product Datasheet Search Results:
9 Pages, 190 KB, Original- BSP315P
- Infineon Technologies
- MOSFET P-CH 60V 1.17A SOT-223 - BSP315P-E6327
9 Pages, 330 KB, Original- BSP315P E6327
- Infineon Technologies
- MOSFET P-CH 60V 1.17A SOT-223 - BSP315P-E6327
9 Pages, 84 KB, Original- BSP315P-E6327
- Infineon Technologies
- MOSFET P-CH 60V 1.17A SOT-223
9 Pages, 330 KB, Original- BSP315P E6327T
- Infineon Technologies
- MOSFET P-CH 60V 1.17A SOT-223 - BSP315PE6327T
9 Pages, 84 KB, Original- BSP315PE6327T
- Infineon Technologies
- MOSFET P-CH 60V 1.17A SOT-223
9 Pages, 548 KB, Original- BSP315P H6327
- Infineon Technologies Ag
- Trans MOSFET P-CH 60V 1.17A Automotive T/R
9 Pages, 548 KB, Original- BSP315PH6327
- Infineon Technologies Ag
- 1.17 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET
10 Pages, 491 KB, Original- BSP315PH6327XTSA1
- Infineon Technologies
- MOSFET P-Ch -60V -1.17A SOT-223-3
9 Pages, 330 KB, Original- BSP315P L6327
- Infineon Technologies
- MOSFET P-CH 60V 1.17A SOT-223 - BSP315P L6327
15 Pages, 962 KB, Original- BSP315PL6327
- Infineon Technologies Ag
- BSP315PL6327
Product Details Search Results:
Infineon.com/BSP315P
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Avalanche Energy Rating (Eas)":"24 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.17 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"...
1635 Bytes - 21:20:35, 17 October 2024
Infineon.com/BSP315P-E6327
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"800 mOhm @ 1.17A, 10V","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 160\u00b5A","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Other Names":"BSP315PE6327 BSP315PINCT","Packaging":"Cut Tape (CT)","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"BSP315P","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","Mounting ...
1690 Bytes - 21:20:35, 17 October 2024
Infineon.com/BSP315PE6327T
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 160\u00b5A","Input Capacitance (Ciss) @ Vds":"160pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP315P","Rds On (Max) @ Id, Vgs":"800 mOhm @ 1.17A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","M...
1631 Bytes - 21:20:35, 17 October 2024
Infineon.com/BSP315P H6327
{"Product Category":"MOSFET","Series":"BSP315","Brand":"Infineon Technologies","Packaging":"Reel","Part # Aliases":"BSP315PH6327XTSA1","RoHS":"Details","Manufacturer":"Infineon"}...
1108 Bytes - 21:20:35, 17 October 2024
Infineon.com/BSP315PH6327
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.8 W","Avalanche Energy Rating (Eas)":"24 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.17 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"...
1619 Bytes - 21:20:35, 17 October 2024
Infineon.com/BSP315PH6327XTSA1
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"*","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 160\u00b5A","Series":"SIPMOS\u00ae","Package / Case":"*","Supplier Device Package":"*","Datasheets":"BSP315P","Rds On (Max) @ Id, Vgs":"800 mOhm @ 1.17A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"*","Power - Max":"1.8W","Standard Package":"1,000","Input Capacitance (Ciss) @ Vds":"160pF @ 25V","Drain to Source Voltage (Vdss)":"60V","Current ...
1672 Bytes - 21:20:35, 17 October 2024
Infineon.com/BSP315P L6327
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"SOT223-3L","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 160\u00b5A","Input Capacitance (Ciss) @ Vds":"160pF @ 25V","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-SOT223-4","Datasheets":"BSP315P","Rds On (Max) @ Id, Vgs":"800 mOhm @ 1.17A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"1.8W","Package / Case":"TO-261-4, TO-261AA","M...
1632 Bytes - 21:20:35, 17 October 2024
Infineon.com/BSP315PL6327
872 Bytes - 21:20:35, 17 October 2024
Infineon.com/BSP315P L6327XT
921 Bytes - 21:20:35, 17 October 2024
Infineon.com/BSP315PL6327XT
{"Polarity":"P","Gate-Source Voltage (Max)":"?20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"1.17 A","Mounting":"Surface Mount","Drain-Source On-Volt":"60 V","Pin Count":"3 +Tab","Packaging":"Tape and Reel","Power Dissipation":"1.8 W","Operating Temp Range":"-55C to 150C","Package Type":"SOT-223","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"0.8 ohm","Number of Elements":"1"}...
1560 Bytes - 21:20:35, 17 October 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSP315P.pdf | 0.19 | 1 | Request |
