BSP315P E6327T - Infineon Technologies

2012-03-29

Rev.1.6 Page 1

BSP315P

SIPMOS Small-Signal-Transistor

Features

• P-Channel

• Enhancement mode

• Avalanche rated

• Logic Level

• d

v

/d

t

rated

Product Summary

Drain source voltage V

V

DS -60

Drain-Source on-state resistance

R

DS(on) 0.8 Ω

Continuous drain current A

I

D-1.17

VPS05163

123

4

Maximum Ratings,at

T

j

= 25 °C, unless otherwise specified

Parameter

Symbol Unit

Value

-1.17

-0.94

A

Continuous drain current

T

A

= 25 °C

T

A

= 70 °C

I

D

Pulsed drain current

T

A

= 25 °C

I

D puls

-4.68

Avalanche energy, single pulse

I

D

= -1.17 A ,

V

DD

= -25 V,

R

GS

= 25 Ω24 mJ

E

AS

Avalanche energy, periodic limited by

T

jmax

E

AR

0.18

d

v

/d

t

6

Reverse diode d

v

/d

t

I

S

= -1.17 A,

V

DS

= -48 V, d

i

/d

t

= 200 A/µs,

T

jmax

= 150 °C

kV/µs

Gate source voltage

V

GS

±20 V

Power dissipation

T

A

= 25 °C

P

tot

1.8 W

Operating and storage temperature

T

j ,

T

stg

-55...+150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Type Package Tape and Reel Information

BSP315PPG-SOT223 L6327: 1000 pcs/reel

Pin 1 Pin2/4 PIN 3

GDS

Marking

BSP315P

• Qualified according to AEC Q101

Packaging

Non dry

ESD Class; JESD22-A114-HBM

Class 0

BSP315P

Thermal Characteristics

Parameter Symbol UnitValues

min. max.typ.

Characteristics

Thermal resistance, junction - soldering point

(Pin 4) 25 K/W-

R

thJS -

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

R

thJA

-

115

70

K/W

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

GS = 0 V,

I

D = -250 µA

V

(BR)DSS -60 - V-

Gate threshold voltage,

V

GS =

V

DS

I

D = -160 µA -1 -1.5 -2

V

GS(th)

Zero gate voltage drain current

V

DS = -60 V,

V

GS = 0 V,

T

j = 25 °C

V

DS = -60 V,

V

GS = 0 V,

T

j = 125 °C

µA

-1

-100

I

DSS

-0.1

-10

-

I

GSS - -10 -100Gate-source leakage current

V

GS = -20 V,

V

DS = 0 V nA

Drain-Source on-state resistance

V

GS = -4.5 V,

I

D = -0.89 A

R

DS(on) - 0.8 1.4 Ω

Drain-Source on-state resistance

V

GS = -10 V,

I

D = -1.17 A

R

DS(on) - 0.5 0.8 Ω

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2012-03-29

Rev.1.6 Page 2

BSP315P

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

V

DS≤2*

I

D*

R

DS(on)max ,

I

D = -0.89 A 0.7

g

fs S-1.4

Input capacitance

V

GS = 0 V,

V

DS = -25 V,

f

= 1 MHz

C

iss 130 160 pF-

C

oss - 5040Output capacitance

V

GS = 0 V,

V

DS = -25 V,

f

= 1 MHz

Reverse transfer capacitance

V

GS = 0 V,

V

DS = -25 V,

f

= 1 MHz 2117

C

rss -

Turn-on delay time

V

DD = -30 V,

V

GS = -4.5 V,

I

D = -0.89 A,

R

G = 18 Ω

- 36 ns24

t

d(on)

Rise time

V

DD = -30 V,

V

GS = -4.5 V,

I

D = -0.89 A,

R

G = 18 Ω

t

r- 149

32 48

t

d(off)

Turn-off delay time

V

DD = -30 V,

V

GS = -4.5 V,

I

D = -0.89 A,

R

G = 18 Ω

-

Fall time

V

DD = -30 V,

V

GS = -4.5 V,

I

D = -0.89 A,

R

G = 18 Ω

t

f- 19 28

2012-03-29

Rev.1.6 Page 3

BSP315P

Electrical Characteristics, at

T

j = 25 °C, unless otherwise specified

Unit

ValuesSymbolParameter

min. typ. max.

Dynamic Characteristics

Gate to source charge

V

DD = -48 V,

I

D = -1.17 A -

Q

gs nC1.10.7

Gate to drain charge

V

DD = -48 V,

I

D = -1.17 A

Q

gd 1.8 2.6-

7.8-

Q

g

Gate charge total

V

DD = -48 V,

I

D = -1.17 A,

V

GS = 0 to -10 V 5.2

Gate plateau voltage

V

DD = -48 V,

I

D = -1.17 A

V

(plateau) - -3.14 - V

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

A = 25 °C

I

S- - -1.17 A

Inverse diode direct current,pulsed

T

A = 25 °C

I

SM - - -4.68

Inverse diode forward voltage

V

GS = 0 V,

I

F = -1.17 A

V

SD - -0.97 -1.3 V

Reverse recovery time

V

R = -30 V,

I

F=

I

S , d

i

F/d

t

= 100 A/µs

t

rr - 30.5 46 ns

Reverse recovery charge

V

R = -30 V,

I

F=

l

S , d

i

F/d

t

= 100 A/µs

Q

rr - 36 54 µC

2012-03-29

Rev.1.6 Page 4

BSP315P

Drain current

I

D =

f

(

T

A)

parameter :

V

GS≥ −10V

0 20 40 60 80 100 120 °C 160

T

A

0.0

-0.1

-0.2

-0.3

-0.4

-0.5

-0.6

-0.7

-0.8

-0.9

-1.0

-1.1

A

-1.3

BSP

315

P

I

D

Power Dissipation

P

tot =

f

(

T

A)

0 20 40 60 80 100 120 °C 160

T

A

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

W

1.9

BSP

315

P

tot

Transient thermal impedance

Z

thJC =

f

(

t

p)

parameter :

D

=

t

p/

T

10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4

s

t

p

-2

10

-1

10

0

10

1

10

2

10

K/W

BSP

315

P

Z

thJC

single pulse 0.01

0.02

0.05

0.10

0.20

D = 0.50

Safe operating area

I

D =

f

(

V

DS )

parameter :

D

= 0 ,

T

A = 25 °C

-10 -1 -10 0 -10 1 -10 2

V

DS

-2

-10

-1

-10

0

-10

1

-10

A

BSP

315

P

I

D

R

DS(on)

=

V

DS

/

I

D

DC

10 ms

1 ms

t

p = 280.0µs

2012-03-29

Rev.1.6 Page 5

BSP315P

Typ. drain-source-on-resistance

R

DS(on) =

f

(

I

D)

parameter:

V

GS

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 A-2.6

I

D

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

Ω

2.6

BSP

315

P

R

DS(on)

a

V

GS [V] =

a

-2.5

b

-3.0

c

-3.5

d

-4.0

e

-4.5

f

-5.0

g

-5.5

h

-6.0

i

-6.5

j

-7.0

kk

-8.0

ll

-10.0

Typ. output characteristics

I

D =

f

(

V

DS)

parameter:

t

p = 80 µs

0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V-5.0

V

DS

0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

-1.4

-1.6

-1.8

-2.0

-2.2

-2.4

A

-2.8

BSP

315

P

I

D

V

GS [V]

a

a -2.5

b

b -3.0

c

c -3.5

d

d -4.0

e

e -4.5

f

f -5.0

g

g -5.5

h

h -6.0

i

i -6.5

j

j -7.0

k

k -8.0

l

P

tot = 2W

l -10.0

Typ. transfer characteristics

I

D=

f

(

V

GS )

V

DS≥ 2 x

I

D x

R

DS(on)max

parameter:

t

p = 80 µs

0.0 -1.0 -2.0 -3.0 -4.0 V-6.0

V

GS

0.0

-0.5

-1.0

-1.5

-2.0

A

-3.0

I

D

Typ. forward transconductance

gfs = f(ID); Tj=25°C

parameter:

g

fs

0.0 0.5 1.0 1.5 2.0 A3.0

I

D

0.0

0.5

1.0

1.5

S

2.5

g

fs

2012-03-29

Rev.1.6 Page 6

BSP315P

Drain-source on-resistance

R

DS(on) =

f

(

T

j)

parameter:

I

D = -1.17 A,

V

GS = -10 V

-60 -20 20 60 100 °C 180

T

j

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

Ω

2.1

BSP

315

P

R

DS(on)

typ

98%

Gate threshold voltage

V

GS(th) =

f

(

T

j)

parameter:

V

GS =

V

DS,

I

D = -160 µA

-60 -20 20 60 100 °C 160

T

j

0.0

-0.5

-1.0

-1.5

-2.0

V

-3.0

V

GS(th)

2%

-60 -20 20 60 100 °C 160

T

j

0.0

-0.5

-1.0

-1.5

-2.0

V

-3.0

V

GS(th)

typ

-60 -20 20 60 100 °C 160

T

j

0.0

-0.5

-1.0

-1.5

-2.0

V

-3.0

V

GS(th)

98%

-60 -20 20 60 100 °C 160

T

j

0.0

-0.5

-1.0

-1.5

-2.0

V

-3.0

V

GS(th)

Typ. capacitances

C = f(VDS)

Parameter:

V

GS=0 V,

f

=1 MHz

0 -5 -10 -15 -20 -25 -30 V-40

V

DS

0

10

1

10

2

10

3

10

pF

C

iss

C

oss

C

rss

Forward characteristics of reverse diode

I

F =

f

(VSD)

parameter:

T

j , tp = 80 µs

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V-3.0

V

SD

-2

-10

-1

-10

0

-10

1

-10

A

BSP

315

P

I

F

T

j = 25 °C typ

T

j = 25 °C (98%)

T

j = 150 °C typ

T

j = 150 °C (98%)

2012-03-29

Rev.1.6 Page 7

BSP315P

Avalanche Energy

E

AS =

f

(

T

j)

parameter:

I

D = -1.17 A ,

V

DD = -25 V

R

GS = 25 Ω

25 45 65 85 105 125 °C 165

T

j

0

5

10

15

mJ

25

E

AS

Typ. gate charge

V

GS =

f

(

Q

Gate)

parameter:

I

D = -1.17 A pulsed

0.0 1.0 2.0 3.0 4.0 5.0 6.0 nC 8.0

Q

Gate

0

-2

-4

-6

-8

-10

-12

V

-16

BSP

315

P

V

GS

DS max

V

0,8

DS max

V

0,2

Drain-source breakdown voltage

V

(BR)DSS = f

(

T

j

)

-60 -20 20 60 100 °C 180

T

j

-54

-56

-58

-60

-62

-64

-66

-68

V

-72

BSP

315

P

V

(BR)DSS

2012-03-29

Rev.1.6 Page 8

2012-03-29

Rev.1.6 Page 9