Product Datasheet Search Results:
10 Pages, 216 KB, Original- BSM75GB170DN2
- Infineon Technologies [eupec]
- BSM75GB170DN2
11 Pages, 204 KB, Original- BSM75GB170DN2
- Infineon Technologies
- IGBT Modules N-CH 1.7KV 110A
9 Pages, 113 KB, Original- BSM75GB170DN2
- Siemens Semiconductors
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Product Details Search Results:
Infineon.com/BSM75GB170DN2
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-7","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"740 ns","Collector-emitter Voltage-Max":"1700 V","Transistor Application":"POWER CONTROL","Turn-on Time-Nom (ton)":"550 ns","Collector Current-Max (IC)":"110 A","Case Connection":"ISOLATED","Transistor Element Material":"SILICON","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","...
1370 Bytes - 12:37:45, 22 October 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSM75GB170DN2.pdf | 0.21 | 1 | Request |
