BSM 75 GB 170 DN2 IGBT Power Module Preliminary data * Half-bridge * Including fast free-wheeling diodes * Package with insulated metal base plate * RG on,min = 22 Ohm Type VCE IC BSM 75 GB 170 DN2 1700V 110A Package Ordering Code HALF-BRIDGE 1 C67070-A2702-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1700 Unit V 1700 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 110 TC = 80 C 75 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 220 TC = 80 C 150 Ptot Power dissipation per IGBT TC = 25 C W 625 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC 0.2 Diode thermal resistance, chip case RthJCD 0.63 Insulation test voltage, t = 1min. Vis Creepage distance + 150 C -55 ... + 150 K/W 4000 Vac - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - Semiconductor Group 1 - 55 / 150 / 56 Jul-16-1996 BSM 75 GB 170 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 5 mA V 4.8 5.5 6.2 VGE = 15 V, IC = 75 A, Tj = 25 C - 3.4 3.9 VGE = 15 V, IC = 75 A, Tj = 125 C - 4.6 5.3 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) ICES mA VCE = 1700 V, VGE = 0 V, Tj = 25 C - 0.5 0.75 VCE = 1700 V, VGE = 0 V, Tj = 125 C - 2 - Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V nA - - 400 AC Characteristics Transconductance gfs VCE = 20 V, IC = 75 A Input capacitance 27 nF - 11 - - 1 - - 0.28 - Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Jul-16-1996 BSM 75 GB 170 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 1200 V, VGE = 15 V, IC = 75 A RGon = 22 Rise time - 400 800 - 150 300 - 650 1000 - 90 140 tr VCC = 1200 V, VGE = 15 V, IC = 75 A RGon = 22 Turn-off delay time td(off) VCC = 1200 V, VGE = -15 V, IC = 75 A RGoff = 22 Fall time tf VCC = 1200 V, VGE = -15 V, IC = 75 A RGoff = 22 Free-Wheel Diode Diode forward voltage VF V IF = 75 A, VGE = 0 V, Tj = 25 C - 2.3 2.8 IF = 75 A, VGE = 0 V, Tj = 125 C - 2.1 - Reverse recovery time trr s IF = 75 A, VR = -1200 V, VGE = 0 V diF/dt = -800 A/s, Tj = 125 C Reverse recovery charge - 0.3 - Qrr C IF = 75 A, VR = -1200 V, VGE = 0 V diF/dt = -800 A/s Tj = 25 C - 7 - Tj = 125 C - 21 - Semiconductor Group 3 Jul-16-1996 BSM 75 GB 170 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 650 W A tp = 800.0ns 550 Ptot 1 s IC 500 10 2 450 10 s 400 100 s 350 10 1 300 1 ms 250 200 10 ms 10 0 150 100 DC 50 0 0 20 40 60 80 100 120 C 10 -1 0 10 160 10 1 10 2 10 3 TC V VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 120 A K/W 100 IC ZthJC 90 10 -1 80 70 60 D = 0.50 50 0.20 10 40 -2 0.10 0.05 30 0.02 20 0.01 single pulse 10 0 0 20 40 60 80 100 120 C 160 TC Semiconductor Group 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Jul-16-1996 BSM 75 GB 170 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 150 150 A A 130 IC 120 110 100 130 17V 15V 13V 11V 9V 7V IC 120 110 100 90 90 80 80 70 70 60 60 50 50 40 40 30 30 20 20 10 0 0.0 10 0 0.0 1.0 2.0 3.0 4.0 V 6.0 VCE 17V 15V 13V 11V 9V 7V 1.0 2.0 3.0 4.0 V 6.0 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 300 A 260 IC 240 220 200 180 160 140 120 100 80 60 40 20 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Jul-16-1996 BSM 75 GB 170 DN2 Typ. capacitances Typ. gate charge VGE = (QGate) parameter: IC puls = 75 A C = f (VCE) parameter: VGE = 0, f = 1 MHz 10 2 20 V nF VGE 16 C 800 V 14 1200 V 10 1 Ciss 12 10 8 10 0 Coss 6 4 Crss 2 0 0.0 0.2 0.4 0.6 0.8 C 10 -1 0 1.1 5 10 15 20 25 30 V 40 VCE QGate Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 0 250 500 Semiconductor Group 750 1000 1250 1500 V 2000 VCE 6 0 250 500 750 1000 1250 1500 V 2000 VCE Jul-16-1996 BSM 75 GB 170 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 22 par.: VCE = 1200 V, VGE = 15 V, IC = 75 A 10 4 10 4 ns ns t t tdoff 10 3 10 3 tdoff tdon tdon tr tr 10 2 10 2 tf tf 10 1 0 20 40 60 80 100 120 140 A 10 1 0 180 20 40 60 80 IC 120 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 1200 V, VGE = 15 V, RG = 22 par.: VCE = 1200 V, VGE = 15 V, IC = 75 A 200 200 mWs mWs Eon E Eon 160 E 160 140 140 120 120 100 100 80 80 60 60 40 40 Eoff 20 0 0 Eoff 20 20 40 60 80 100 120 140 A 180 IC Semiconductor Group 7 0 0 20 40 60 80 120 RG Jul-16-1996 BSM 75 GB 170 DN2 Forward characteristics of fast recovery Transient thermal impedance Zth JC = (tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj 10 0 150 A K/W Tj=125C 130 IF Diode 120 Tj=25C ZthJC 10 -1 110 100 90 80 10 -2 70 D = 0.50 60 0.20 0.10 50 10 -3 40 0.05 single pulse 0.02 30 0.01 20 10 0 0.0 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 V VF 3.5 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Jul-16-1996 BSM 75 GB 170 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 250 g Semiconductor Group 9 Jul-16-1996