Product Datasheet Search Results:
10 Pages, 213 KB, Original- BSM35GB120DN2
- Eupec Power Semiconductors
- IGBT Power Module
10 Pages, 191 KB, Original- BSM35GB120DN2
- Infineon Technologies
- IGBT Modules 1200V 35A DUAL
10 Pages, 191 KB, Original- BSM35GB120DN2HOSA1
- Infineon Technologies Ag
- Trans IGBT Module N-CH 1200V 50A 280000mW 7-Pin 34MM-1 Tray
9 Pages, 111 KB, Original- BSM35GB120DN2
- Siemens Semiconductors
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area)
Product Details Search Results:
Infineon.com/BSM35GB120DN2
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-7","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"450 ns","Collector-emitter Voltage-Max":"1200 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"35 A","Case Connection":"ISOLATED","Turn-on Time-Nom (ton)":"120 ns","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configuratio...
1327 Bytes - 12:21:25, 03 January 2025
Infineon.com/BSM35GB120DN2HOSA1
{"Collector Current (DC) ":"50(A)","Operating Temperature (Min)":"-40C","Mounting":"Screw","Operating Temperature (Max)":"125C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Packaging":"Tray","Operating Temperature Classification":"AUTOMOTIVEC","Rad Hardened":"No","Package Type":"34MM-1","Configuration":"Dual","Pin Count":"7"}...
1508 Bytes - 12:21:25, 03 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSM35GB120DN2.pdf | 0.20 | 1 | Request |
