Semiconductor Group 1 Mar-28-1996
BSM 35 GB 120 DN2
IGBT Power Module
Preliminary data
• Half-bridge
• Including fast free-wheeling diodes
• Doubled diode area
• Package with insulated metal base plate
Type
V
CE
I
CPackage Ordering Code
BSM 35 GB 120 DN2 1200V 50A HALF-BRIDGE 1 C67070-A2111-A70
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
V
CE 1200 V
Collector-gate voltage
R
GE = 20 kΩ
V
CGR 1200
Gate-emitter voltage
V
GE ± 20
DC collector current
T
C = 25 °C
T
C = 80 °C
I
C
35
50 A
Pulsed collector current,
t
p = 1 ms
T
C = 25 °C
T
C = 80 °C
I
Cpuls
70
100
Power dissipation per IGBT
T
C = 25 °C
P
tot 280 W
Chip temperature
T
j+ 150 °C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip case
R
thJC ≤ 0.44 K/W
Diode thermal resistance, chip case
R
thJCD≤ 0.8
Insulation test voltage,
t
= 1min.
V
is 2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F -
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Semiconductor Group 2 Mar-28-1996
BSM 35 GB 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
V
GE =
V
CE,
I
C = 1.2 mA
V
GE(th) 4.5 5.5 6.5 V
Collector-emitter saturation voltage
V
GE = 15 V,
I
C = 35 A,
T
j = 25 °C
V
GE = 15 V,
I
C = 35 A,
T
j = 125 °C
V
CE(sat)
-
- 3.3
2.7 3.9
3.2
Zero gate voltage collector current
V
CE = 1200 V,
V
GE = 0 V,
T
j = 25 °C
V
CE = 1200 V,
V
GE = 0 V,
T
j = 125 °C
I
CES
-
- 2.4
0.6 -
1 mA
Gate-emitter leakage current
V
GE = 20 V,
V
CE = 0 V
I
GES - - 150 nA
AC Characteristics
Transconductance
V
CE = 20 V,
I
C = 35 A
g
fs 11 - - S
Input capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
iss - 2 - nF
Output capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
oss - 0.3 -
Reverse transfer capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
rss - 0.14 -
Semiconductor Group 3 Mar-28-1996
BSM 35 GB 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at
T
j = 125 °C
Turn-on delay time
V
CC = 600 V,
V
GE = 15 V,
I
C = 35 A
R
Gon = 39 Ω
t
d(on)
- 60 120
ns
Rise time
V
CC = 600 V,
V
GE = 15 V,
I
C = 35 A
R
Gon = 39 Ω
t
r
- 60 120
Turn-off delay time
V
CC = 600 V,
V
GE = -15 V,
I
C = 35 A
R
Goff = 39 Ω
t
d(off)
- 400 600
Fall time
V
CC = 600 V,
V
GE = -15 V,
I
C = 35 A
R
Goff = 39 Ω
t
f
- 50 75
Free-Wheel Diode
Diode forward voltage
I
F = 35 A,
V
GE = 0 V,
T
j = 25 °C
I
F = 35 A,
V
GE = 0 V,
T
j = 125 °C
V
F
-
- 1.9
2.3 -
2.8 V
Reverse recovery time
I
F = 35 A,
V
R = -600 V,
V
GE = 0 V
d
iF/
dt
= -800 A/µs,
T
j = 125 °C
t
rr
- 0.25 -
µs
Reverse recovery charge
I
F = 35 A,
V
R = -600 V,
V
GE = 0 V
d
iF/
dt
= -800 A/µs
T
j = 25 °C
T
j = 125 °C
Q
rr
-
- 5
2 -
-
µC
Semiconductor Group 4 Mar-28-1996
BSM 35 GB 120 DN2
Power dissipation
P
tot = ƒ(
T
C)
parameter:
T
j ≤ 150 °C
020 40 60 80 100 120 °C 160
T
C
0
20
40
60
80
100
120
140
160
180
200
220
240
W
300
P
tot
Safe operating area
I
C = ƒ(
V
CE)
parameter:
D
= 0
, T
C = 25°C ,
T
j ≤ 150 °C
-1
10
0
10
1
10
2
10
3
10
A
I
C
10 0 10 1 10 2 10 3 V
V
CE
DC
10 ms
1 ms
100 µs
t
p = 18.0µs
Collector current
I
C = ƒ(
T
C)
parameter:
V
GE ≥ 15 V ,
T
j ≤ 150 °C
020 40 60 80 100 120 °C 160
T
C
0
5
10
15
20
25
30
35
40
45
A
55
I
C
Transient thermal impedance IGBT
Z
th JC = ƒ(
t
p)
parameter:
D = t
p /
T
-4
10
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 5 Mar-28-1996
BSM 35 GB 120 DN2
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p = 80 µs,
T
j = 25 °C
0 1 2 3 V 5
V
CE
0
5
10
15
20
25
30
35
40
45
50
55
60
A
70
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p = 80 µs,
T
j = 125 °C
0 1 2 3 V 5
V
CE
0
5
10
15
20
25
30
35
40
45
50
55
60
A
70
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter:
t
p = 80 µs,
V
CE = 20 V
0246810 V 14
V
GE
0
5
10
15
20
25
30
35
40
45
50
55
60
A
70
I
C
Semiconductor Group 6 Mar-28-1996
BSM 35 GB 120 DN2
Typ. gate charge
V
GE = ƒ(
Q
Gate)
parameter:
I
C puls = 35 A
040 80 120 160 nC 220
Q
Gate
0
2
4
6
8
10
12
14
16
V
20
V
GE
800 V600 V
Typ. capacitances
C
=
f
(
V
CE)
parameter:
V
GE = 0 V, f = 1 MHz
0 5 10 15 20 25 30 V 40
V
CE
-2
10
-1
10
0
10
1
10
nF
C Ciss
Coss
Crss
Reverse biased safe operating area
I
Cpuls
= f(V
CE
)
,
Tj = 150°C
parameter:
V
GE = 15 V
0200 400 600 800 1000 1200 V 1600
V
CE
0.0
0.5
1.0
1.5
2.5
I
Cpuls/
I
C
Short circuit safe operating area
I
Csc
= f(V
CE
) ,
Tj = 150°C
parameter:
V
GE = ± 15 V,
t
SC ≤ 10 µs, L < 50 nH
0200 400 600 800 1000 1200 V 1600
V
CE
0
2
4
6
8
12
I
Csc/
I
C
Semiconductor Group 7 Mar-28-1996
BSM 35 GB 120 DN2
Typ. switching time
I = f (I
C
) ,
inductive load , Tj = 125°C
par.:
V
CE = 600 V,
V
GE = ± 15 V,
R
G = 39 Ω
010 20 30 40 50 60 A 80
I
C
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching time
t = f (R
G
) ,
inductive load , Tj = 125°C
par.:
V
CE = 600 V,
V
GE = ± 15 V,
I
C = 35 A
020 40 60 80 100 120 140 Ω180
R
G
1
10
2
10
3
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f (I
C
) ,
inductive load , Tj = 125°C
par.:
V
CE = 600 V,
V
GE = ± 15 V,
R
G = 39 Ω
010 20 30 40 50 60 A 80
I
C
0
2
4
6
8
10
12
14
16
mWs
20
E
Eon
Eoff
Typ. switching losses
E = f (R
G
) ,
inductive load
,
Tj = 125°C
par.:
V
CE = 600V,
V
GE = ± 15 V,
I
C = 35 A
020 40 60 80 100 120 140 Ω180
R
G
0
2
4
6
8
10
12
14
16
mWs
20
E
Eon
Eoff
Semiconductor Group 8 Mar-28-1996
BSM 35 GB 120 DN2
Forward characteristics of fast recovery
reverse diode
I
F
= f(V
F
)
parameter:
T
j
0.0 0.5 1.0 1.5 2.0 V 3.0
V
F
0
5
10
15
20
25
30
35
40
45
50
55
60
A
70
I
F
T
j=25°C
=125°C
j
T
Transient thermal impedance Diode
Z
th JC = ƒ(
t
p)
parameter:
D = t
p /
T
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 9 Mar-28-1996
BSM 35 GB 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 180 g
