Product Datasheet Search Results:
11 Pages, 742 KB, Original- BSM150GB120DN2
- Eupec Power Semiconductors
- IGBT Power Module
9 Pages, 127 KB, Original- BSM150GB120DN2E3166
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- TRANS IGBT MODULE N-CH 1200V 210A 7HALF-BRIDGE 2
11 Pages, 156 KB, Original- BSM150GB120DN2
- Infineon Technologies
- IGBT Modules 1200V 150A DUAL
11 Pages, 156 KB, Original- BSM150GB120DN2HOSA1
- Infineon Technologies Ag
- Trans IGBT Module N-CH 1200V 210A 1250000mW 7-Pin
9 Pages, 131 KB, Original- BSM150GB120DN2
- Siemens Semiconductors
- IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
9 Pages, 132 KB, Original- BSM150GB120DN2E3166
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Product Details Search Results:
Infineon.com/BSM150GB120DN2
{"Gate-Emitter Leakage Current":"320 nA","Continuous Collector Current at 25 C":"210 A","Product Category":"IGBT Modules","Factory Pack Quantity":"500","Brand":"Infineon Technologies","Pd - Power Dissipation":"1.25 kW","Collector-Emitter Saturation Voltage":"2.5 V","Collector- Emitter Voltage VCEO Max":"1200 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"Half Bridge2","Configuration":"Half Bridge",...
1580 Bytes - 22:28:08, 02 November 2024
Infineon.com/BSM150GB120DN2HOSA1
{"Collector Current (DC) ":"210(A)","Operating Temperature (Min)":"-40C","Mounting":"Screw","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Operating Temperature Classification":"Automotive","Rad Hardened":"No","Configuration":"Dual","Pin Count":"7"}...
1428 Bytes - 22:28:08, 02 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| BSM150GB120DN2.pdf | 0.72 | 1 | Request |
