BSM 150 GB 120 DN2 IGBT Power Module * Half-bridge * Including fast free-wheeling diodes * Package with insulated metal base plate Type VCE BSM 150 GB 120 DN2 1200V 210A IC Package Ordering Code HALF-BRIDGE 2 C67076-A2108-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 210 TC = 80 C 150 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 420 TC = 80 C 300 Power dissipation per IGBT W Ptot TC = 25 C 1250 Chip temperature Tj + 150 Storage temperature Tstg Thermal resistance, chip case RthJC 0.1 Diode thermal resistance, chip case RthJCD 0.25 Insulation test voltage, t = 1min. Vis Creepage distance C -40 ... + 125 K/W 2500 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 sec 40 / 125 / 56 Oct-21-1997 BSM 150 GB 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 6 mA 4.5 5.5 6.5 VGE = 15 V, IC = 150 A, Tj = 25 C - 2.5 3 VGE = 15 V, IC = 150 A, Tj = 125 C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1200 V, VGE = 0 V, Tj = 25 C - 2 2.8 VCE = 1200 V, VGE = 0 V, Tj = 125 C - 8 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 320 AC Characteristics Transconductance VCE = 20 V, IC = 150 A Input capacitance 62 nF - 11 - - 1.6 - - 0.6 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Oct-21-1997 BSM 150 GB 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 150 A RGon = 5.6 Rise time - 200 400 - 100 200 - 600 800 - 70 100 tr VCC = 600 V, VGE = 15 V, IC = 150 A RGon = 5.6 Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 150 A RGoff = 5.6 Fall time tf VCC = 600 V, VGE = -15 V, IC = 150 A RGoff = 5.6 Free-Wheel Diode Diode forward voltage V VF IF = 150 A, VGE = 0 V, Tj = 25 C - 2.3 2.8 IF = 150 A, VGE = 0 V, Tj = 125 C - 1.8 - Reverse recovery time s trr IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/s, Tj = 125 C Reverse recovery charge - 0.4 C Qrr IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/s Tj = 25 C - 5 - Tj = 125 C - 18 - 3 Oct-21-1997 BSM 150 GB 120 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 1300 W t = 18.0s p A 1100 Ptot IC 1000 900 10 2 100 s 800 700 600 1 ms 500 10 1 400 300 10 ms 200 100 0 0 20 40 60 80 100 120 C 10 0 0 10 160 10 1 10 DC 3 10 2 TC V VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 240 A K/W 200 IC ZthJC 180 10 -1 160 140 10 -2 120 D = 0.50 100 0.20 80 0.10 0.05 10 -3 60 0.02 40 0.01 single pulse 20 0 0 20 40 60 80 100 120 C 160 TC 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Oct-21-1997 BSM 150 GB 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 300 300 A A 260 IC 240 220 200 260 17V 15V 13V 11V 9V 7V IC 240 220 200 180 180 160 160 140 140 120 120 100 100 80 80 60 60 40 40 20 0 20 0 0 1 2 3 V 5 0 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 300 A 260 IC 240 220 200 180 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 V 14 VGE 5 Oct-21-1997 BSM 150 GB 120 DN2 Typ. capacitances Typ. gate charge VGE = (QGate) parameter: IC puls = 150 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 C 600 V 14 800 V 10 1 Ciss 12 10 8 Coss 10 0 6 Crss 4 2 0 0 200 400 600 800 nC 10 -1 0 1100 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 25 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 200 400 600 800 1000 1200 V 1600 VCE 6 0 0 200 400 600 800 1000 1200 V 1600 VCE Oct-21-1997 BSM 150 GB 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 5.6 par.: VCE = 600 V, VGE = 15 V, IC = 150 A 10 4 10 4 ns ns t t 10 3 tdoff 10 3 tdoff tdon tr tdon tr 10 2 10 2 tf tf 10 1 0 50 100 150 200 250 300 A IC 10 1 0 400 10 20 30 40 60 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 5.6 par.: VCE = 600V, VGE = 15 V, IC = 150 A 120 120 mWs mWs Eon E E 80 80 60 60 40 Eon 40 Eoff Eoff 20 0 0 20 50 100 150 200 250 300 A IC 400 7 0 0 10 20 30 40 60 RG Oct-21-1997 BSM 150 GB 120 DN2 Forward characteristics of fast recovery Transient thermal impedance Zth JC = (tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj Diode 10 0 300 A K/W 260 IF 240 ZthJC 10 -1 220 200 180 Tj=125C 160 Tj=25C 10 -2 140 D = 0.50 120 0.20 0.10 100 0.05 10 -3 80 0.02 60 20 0 0.0 0.01 single pulse 40 0.5 1.0 1.5 2.0 V 3.0 VF 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Oct-21-1997 BSM 150 GB 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g 9 Oct-21-1997 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM150GB120DN2 Anhang C-Serie Appendix C-series Gehause spezifische Werte Housing specific values Modulinduktivitat stray inductance module typ. LsCE 20 nH Gehausemae C-Serie Package outline C-series Appendix C-series Appendix_C-Serie_BSM150GB120DN2.xls 2001-09-20 Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschlielich fur technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes fur die von Ihnen anvisierte Anwendungsowie die Beurteilung der Vollstandigkeitder bereitgestellten Produktdaten fur diese Anwendungobliegt Ihnen bzw. Ihren technischen Abteilungen. In diesem Produktdatenblatt werden diejenigen Merkmale besch rieben, fur die wir eine liefervertragliche Gewahrleistung ubernehmen. Eine solche Gewahrleistung richtet sich ausschliel ich nach Magabe der im jeweiligen Liefervertrag enthaltenen Bestimmungen. Garantien jeglicher Art werden fur dasProdukt und dessen Eigenschaften keinesfalls ubernommen. 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