Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 1mA","Other Drawings":"TO-92 Pin Out TO-92 Front TO-92 Side","Package \/ Case":"TO-226-3, TO-92-3 (TO-226AA)","Current - Continuous Drain (Id) @ 25\u00b0C":"270mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Rds On (Max) @ Id, Vgs":"5 Ohm @ 200mA, 10V","Datasheets":"BS170P","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"4,000","Drain to...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.6250 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2700 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor ...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2700 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Appli...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2700 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Appli...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"ACTIVE-UNCONFIRMED","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2700 A","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Transistor Appli...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 1mA","Series":"-","Standard Package":"2,000","Supplier Device Package":"E-Line (TO-92 compatible)","Datasheets":"BS170P","Rds On (Max) @ Id, Vgs":"5 Ohm @ 200mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"625mW","Package \/ Case":"E-Line-3","Mounting Type":"Through Hol...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-92-3(StandardBody),TO-226_straightlead","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 1mA","Series":"-","Standard Package":"2,000","Supplier Device Package":"E-Line (TO-92 compatible)","Datasheets":"BS170P","Rds On (Max) @ Id, Vgs":"5 Ohm @ 200mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"625mW","Package \/ Case":"E-Line-3","Mounting Type":"Through Hol...

{"Terminal Finish":"MATTE TIN","Terminal Form":"WIRE","Power Dissipation Ambient-Max":"1 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2700 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUC...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.27(A)","Mounting":"Through Hole","Drain-Source On-Volt":"60(V)","Pin Count":"3","Power Dissipation":"0.625(W)","Operating Temp Range":"-55C to 150C","Package Type":"E-Line","Rad Hardened":"No","Type":"Small Signal","Drain-Source On-Res":"5(ohm)","Number of Elements":"1"}...