N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93
FEATURES
* 60 Volt VDS
*R
DS(on)=5Ω
REFER TO ZVN3306A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 60 V
Continuous Drain Current at Tamb =25°C ID270 mA
Pulsed Drain Current IDM 3A
Gate-Source Voltage VGS ±20 V
Power Dissipa tion at Tamb =25°C Ptot 625 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25 °C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage BVDSS 60 V ID=100µA, VGS=0V
Gate-Source
Threshold Volta ge VGS(th) 0.8 3 V ID=1mA, VDS=VGS
Gate Bod y Lea kage IGSS 10 nA VGS=15V, VDS=0V
Zero G ate Voltag e
Drain Current IDSS 0.5 µAVGS=0V, VDS=25V
Static Drain-Source
on-State Resistance (1) RDS(on) 5ΩVGS=10V, ID=200mA
Forward
Transconductance (1)(2)gfs 200 mS VDS=10V, ID=200mA
Input Capacitance (2) Ciss 60 pF VGS=0V, VDS=10V
f=1MHz
Turn-On Time (2)(3) t(on) 10 ns VDD≈15 V, ID=600mA
Turn-Off Time (2)(3) t(off) 10 ns
(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% (2) Sample test
(3) Switching times measured with a 50Ω source impedance and <5ns rise time on a pulse generator
BS170P
3-27
D
G
S
E-Line
TO92 Compatible
