Datasheet.Directory

{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Polarity":"NPN","Terminal Form":"FLAT","Package Style":"FLANGE MOUNT","Collector Current-Max (IC)":"20 A","Collector-emitter Voltage-Max":"27 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"2","Case Connection":"EMITTER","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"RF POWER","Package Shape":"RECTANGULAR","Configurat...

{"@I(C) (A) (Test Condition)":"10m","Absolute Max. Power Diss. (W)":"3.0","I(CBO) Max. (A)":"1.0m","I(C) Abs.(A) Collector Current":"300m","Semiconductor Material":"Silicon","h(FE) Max. Current gain.":"120","h(FE) Min. Static Current Gain":"30","@V(CE) (V) (Test Condition)":"26","Power Gain Min. (dB)":"8.0","V(BR)CEO (V)":"28","@Freq. (Hz) (Test Condition)":"1.9G","@V(CBO) (V) (Test Condition)":"28","Military":"N","V(BR)CBO (V)":"60","Package":"SOT-409B"}...

{"@I(C) (A) (Test Condition)":"25m","Absolute Max. Power Diss. (W)":"12","I(CBO) Max. (A)":"3.0m","I(C) Abs.(A) Collector Current":"1.2","Semiconductor Material":"Silicon","h(FE) Max. Current gain.":"120","h(FE) Min. Static Current Gain":"30","@V(CE) (V) (Test Condition)":"26","Power Gain Min. (dB)":"8.0","V(BR)CEO (V)":"28","@Freq. (Hz) (Test Condition)":"1.9G","@V(CBO) (V) (Test Condition)":"28","Military":"N","V(BR)CBO (V)":"60","Package":"SOT-409B"}...