DATA SH EET
Product specification 1997 Aug 22
DISCRETE SEMICONDUCTORS
BLV2046
UHF power transistor
1997 Aug 22 2
Philips Semiconductors Product specification
UHF power transistor BLV2046
FEATURES
•Emitter ballasting resistors for optimum temperature
profile
•Gold metallization ensures excellent reliability
•Internal input and output matching to achieve high
power gain and collector efficiency for an easy design of
wideband circuits.
APPLICATIONS
•Common emitter class-AB operation in PCN and PCS
applications in the 1800 to 1990 MHz frequency range.
DESCRIPTION
NPN silicon planar transistor in a 2-lead SOT460A flange
package with a ceramic cap. The emitter is connected to
the flange.
PINNING - SOT460A
PIN SYMBOL DESCRIPTION
1 c collector
2 b base
3 e emitter, connected to flange
Fig.1 Simplified outline.
handbook, halfpage
MBK093
Top view
23
1
QUICK REFERENCE DATA
RF performance at Th=25°C in a common emitter test circuit
MODE OF
OPERATION f
(MHz) VCE
(V) PL
(W) Gp
(dB) ηC
(%) dim
(dBc)
CW, class-AB 1990 26 50 ≥7.5 ≥40 −
2-tone, class-AB f1= 1990.0; f2= 1990.1 26 50 (PEP) typ. 8 typ. 33 typ. −30
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location
of the user. It must never be thrown out with the general or domestic waste.
1997 Aug 22 3
Philips Semiconductors Product specification
UHF power transistor BLV2046
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tj=25°C unless otherwise specified.
Note
1. Die only.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −60 V
VCEO collector-emitter voltage open base −27 V
VEBO emitter-base voltage open collector −2.5 V
ICcollector current (DC) −12 A
IC(AV) average collector current −12 A
Ptot total power dissipation Tmb =25°C−195 W
Tstg storage temperature −65 +150 °C
Tjoperating junction temperature −200 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
Rth j-mb thermal resistance from junction to mounting-base Pdis = 195 W; Tmb =25°C 0.9 K/W
Rth mb-h thermal resistance from mounting-base to heatsink 0.2 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)CBO collector-base breakdown voltage IC= 20 mA; open emitter 65 −−V
V
(BR)CEO collector-emitter breakdown voltage IC= 60 mA; open base 27 −−V
V
(BR)EBO emitter-base breakdown voltage IE= 20 mA; IB= 30 mA; open collector 3.2 −−V
I
CBO collector-base leakage current VCB = 40 V; IE=0 −−4mA
h
FE DC current gain VCE =5V; I
C=1 A 20 −100
Cccollector capacitance VCB = 26 V; IE=i
e= 0; f = 1 MHz;
note 1 −60 −pF
Cre feedback capacitance VCE = 26 V; IC= 0; f = 1 MHz −40 −pF
1997 Aug 22 4
Philips Semiconductors Product specification
UHF power transistor BLV2046
APPLICATION INFORMATION
RF performance at Th=25°C in a common-emitter test circuit.
Ruggedness in class-AB operation
The BLV2046 is capable of withstanding a load mismatch corresponding to VSWR = 2:1 through all phases under the
following conditions: f1= 1990.0 MHz; f2= 1990.1 MHz; VCE = 26 V; ICQ = 200 mA; PL= 50 W (PEP) and Th=25°C.
MODE OF
OPERATION f
(MHz) VCE
(V) ICQ
(mA) PL
(W) Gp
(dB) ηC
(%) dim
(dBc)
CW class-AB 1990 26 200 50 ≥7.5 ≥40 −
2-tone class-AB f1= 1990.0; f2= 1990.1 26 200 50 (PEP) typ. 8 typ. 33 typ. −30
Fig.2 Power gain and efficiency as a function of
load power; typical values.
VCE =26V; I
CQ = 200 mA; f = 1990 MHz.
handbook, halfpage
0204060
10
00
8
6
4
2
MDA208
Gp
(dB)
PL (W)
Gp
ηC
ηC
(%)
50
40
30
20
10
Fig.3 Load power as a function of drive power;
typical values.
VCE =26V; I
CQ = 200 mA; f = 1990 MHz.
handbook, halfpage
010
60
PL
(W)
PD (W)
0
20
40
2468
MDA209
1997 Aug 22 5
Philips Semiconductors Product specification
UHF power transistor BLV2046
Fig.4 Power gain expansion as a function of drive
power; typical values.
VCE = 26 V; f = 1990 MHz.
(1) ICQ = 600 mA.
(2) ICQ = 400 mA. (3) ICQ = 200 mA.
(4) ICQ = 100 mA.
handbook, halfpage
0
Gp
(dB)
PD (W)
10
2
4
6
8
MDA213
10−310−210−1110
(2)
(3)
(4)
(1)
Fig.5 Power gain expansion as a function of load
power; typical values.
VCE =26V;f
1= 1990 MHz; f2= 1990.1 MHz.
(1) ICQ = 600 mA.
(2) ICQ = 400 mA. (3) ICQ = 200 mA.
(4) ICQ = 100 mA.
handbook, halfpage
10
0
PL (PEP) (W)
Gp
(dB)
0
MDA214
11010
2
2
4
6
8(2)
(3)
(4)
(1)
Fig.6 Intermodulation distortion as a function of
load power; typical values.
VCE =26V;f
1= 1990 MHz; f2= 1990.1 MHz.
(1) ICQ = 100 mA.
(2) ICQ = 200 mA. (3) ICQ = 400 mA.
(4) ICQ = 600 mA.
handbook, halfpage
0
020 60
−50 40
−40
−30
−20
−10
MDA215
d3
(dBc)
PL (PEP) (W)
(2)
(1)
(3)
(4)
Fig.7 Intermodulation distortion as a function of
load power; typical values.
VCE = 26 V; ICQ = 200 mA; f1= 1990 MHz; f2= 1990.1 MHz.
handbook, halfpage
0
d3
d5
0
−20
−40
−60 20 40 60
MDA216
dim
(dBc)
PL (PEP) (W)
1997 Aug 22 6
Philips Semiconductors Product specification
UHF power transistor BLV2046
List of components
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C8 multilayer ceramic chip capacitor; note 1 30 pF
C2, C3 trimmer capacitor 0.4 to 2.5 pF
C4, C5 feedthrough bypass capacitor 1500 pF
C6, C7 tantal SMD capacitor 10 µF; 35 V
C9 electrolytic capacitor 10 µF; 100 V
C10 multilayer ceramic chip capacitor 22 nF 2222 629 08223
C11 electrolytic capacitor 10 µF; 63 V
L1 5 turns enamelled 0.5 mm copper wire int. dia.=4mm;
length = 6.7 mm
L2 2 turns enamelled 0.5 mm copper wire int. dia.=4mm;
length = 2.7 mm
L3 stripline; note 2 48.8 Ω5.34 ×0.59 mm
L4 stripline; note 2 17 Ω1.2 ×3.23 mm
L5 stripline; note 2 48.8 Ω2.93 ×0.59 mm
Fig.8 Class-AB test circuit for 1990 MHz.
handbook, full pagewidth
MGK450
,,,,,
,,,,,
,,,,,
,,,
,,,
,,,
,,
,,
,,,,,,,
,,,,,,,
,,,,,,,
,,,,,,,
output
50 Ω
input
50 Ω
S4
S2
C1
L3 L4 L5
S1
L6
S3
T1 L7
L8
L9
L10 L11
L12
C3
C2
C8
L13L14
L15
L2
C7
C5
VCE (+26 V)
L1
C6
C4
C11
C10
C9 R1
P1
R2 R3
D1
D2
VCE (+26 V)
F1
TR1
1997 Aug 22 7
Philips Semiconductors Product specification
UHF power transistor BLV2046
Notes
1. American Technical Ceramics type 100A (C1), type 100B (C8) or capacitor of same quality.
2. The striplines are on a double copper-clad PCB with duroid 6010 dielectric (εr= 10.2); thickness 0.635 mm.
3. In thermal contact with TR1.
4. In thermal contact with DUT.
L6 stripline; note 2 48.8 Ω6.63 ×0.59 mm
L7 stripline; note 2 17.1 Ω1.6 ×3.2 mm
L8 stripline; note 2 6.8 Ω6×9.6 mm
L9 stripline; note 2 6.8 Ω9.11 ×9.6 mm
L10 stripline; note 2 16.6 Ω5.09 ×3.32 mm
L11 stripline; note 2 10.9 Ω0.85 ×5.59 mm
L12 stripline; note 2 31.9 Ω9.26 ×1.3 mm
L13 stripline; note 2 48.8 Ω0.24 ×0.59 mm
L14 stripline; note 2 11.9 Ω1.15 ×5.04 mm
L15 stripline; note 2 48.8 Ω2.5 ×0.59 mm
S1 stub; note 2 2.4 ×2.17 mm
S2 stub; note 2 2.4 ×3.04 mm
S3 stub; note 2 0.9 ×8.63 mm
S4 stub; note 2 0.9 ×7.29 mm
T1 taper; note 2 1.3 ×2.7 / 3.2 mm
F1 grade 4B1 ferrite bead 4330 030 43081
P1 linear potentiometer 5 kΩ
R1 resistor 100 Ω, 3 W
R2 resistor 1 kΩ, 0.25 W
R3 resistor 56 Ω, 3 W
TR1 transistor BD241C
D1 diode, note 3 BY239
D2 diode, note 4 BY239
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
1997 Aug 22 8
Philips Semiconductors Product specification
UHF power transistor BLV2046
Fig.9 Component layout and printed-circuit board for 1990 MHz class-AB test circuit.
Dimensions in mm.
The components are situated on one side of the copper-clad board, the other side is unetched and serves as a ground plane. Earth connections from the
component side to the ground plane are made by through metallization.
handbook, full pagewidth
40
30 30
MGK451
C5
C4
+VBE +VCE
L1
C6 F1
C3
C2
input
50 Ωoutput
50 Ω
C7
L2
C8
C1
1997 Aug 22 9
Philips Semiconductors Product specification
UHF power transistor BLV2046
Fig.10 Input impedance as function of the frequency
(series components); typical values.
VCE = 26 V; ICQ = 400 mA; PL= 50 W; Tmb =25°C.
handbook, halfpage
1800
3
2
1
f (MHz)
Zi
(Ω)
01850 1900 20001950
MDA210
ri
xi
Fig.11 Load impedance as a function of the
frequency (series components); typical
values.
VCE = 26 V; ICQ = 400 mA; PL= 50 W; Tmb =25°C.
handbook, halfpage
1800 1850 1900 2000
4
2
f (MHz)
ZL
(Ω)
−2
−4
0
1950
MDA211
RL
XL
Fig.12 Gain as a function of the frequency;
typical values.
VCE = 26 V; ICQ = 200 mA; PL= 50 W; Tmb =25°C.
handbook, halfpage
1800 1850 1900 2000
16
12
4
0
8
1950
MDA212
Gp
(dB)
f (MHz)
Fig.13 Definition of transistor impedance.
handbook, halfpage
MBA451
ZiZL
1997 Aug 22 10
Philips Semiconductors Product specification
UHF power transistor BLV2046
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT460A 97-05-23
0 5 10 mm
scale
Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT460A
0.16
0.07
9.78
9.52 12.45
11.68 6.94
6.22 1.66
1.39 6.10
5.33
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
3.28
3.02
5.39
4.49 2.37
1.95
D
q
U1
1
3
2
A
U2E
p
b
L
L
Q
F
c
UNIT Q
cDEFLp q
mm
b
22.99
22.73
U2
U1
6.43
6.17 0.5117.98
w1
1.02
w2
A
MC
C
Aw1
w2
AB
M
B
1997 Aug 22 11
Philips Semiconductors Product specification
UHF power transistor BLV2046
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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© Philips Electronics N.V. 1997 SCA55
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Printed in The Netherlands 127067/00/01/pp12 Date of release: 1997 Aug 22 Document order number: 9397 750 01823
