Datasheet.Directory

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERAMIC PACKAGE-3","Terminal Form":"FLAT","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"RF POW...

{"Category":"MOSFET","Maximum Drain Source Voltage":"65 V","Description":"Value","Maximum Continuous Drain Current":"4.5 A","Package":"2SOT-608A","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b115 V","Channel Mode":"Enhancement","Operating Temperature":"-65 to 150 \u00b0C","RDS-on":"0.3@9V Ohm","Manufacturer":"NXP Semiconductors"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"65 V","Description":"Value","Maximum Continuous Drain Current":"4.5 A","Package":"2SOT-608A","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b115 V","Channel Mode":"Enhancement","Operating Temperature":"-65 to 150 \u00b0C","RDS-on":"0.3@9V Ohm","Manufacturer":"NXP Semiconductors"}...

{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Channel Type":"N-CHANNEL","Terminal Form":"FLAT","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Drain Current-Max (ID)":"5 A","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Case Connection":"SOURCE","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"RF POWER","Package Sh...