DATA SHEET
Preliminary specification 2000 Sep 21
DISCRETE SEMICONDUCTORS
BLF2022-70
UHF power LDMOS transistor
b
ook, halfpage
M3D379
2000 Sep 21 2
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2022-70
FEATURES
•High power gain
•Easy power control
•Excellent ruggedness
•Designed for broadband operation (2.0 to 2.2 GHz).
•Internal input and output matching for high gain and
efficiency
APPLICATIONS
•Common source class-AB operation for PCN and PCS
applications in the 2000 to 2200 MHz frequency range.
•W-CDMA, CDMA and multicarrier applications.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange SOT502A
package with a ceramic cap. The common source is
connected to the mounting flange.
PINNING
PIN DESCRIPTION
1drain
2gate
3 source connected to flange
handbook, halfpage
Top view MBK394
1
23
Fig.1 Simplified outline SOT502A.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
MODE OF OPERATION f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
Two-tone, class-AB f1= 2200; f2= 2200.1 28 65 (PEP) >10.5 >30 ≤−25
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2000 Sep 21 3
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2022-70
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th=25°C; Rth j-h = 1.15 K/W; unless otherwise specified.
Ruggedness in class-AB operation
The BLF2022-70 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS =26V; I
DQ = 500 mA; PL= 65 W (CW); f = 2200 MHz.
SYMBOL PARAMETER MIN. MAX. UNIT
VDS drain-source voltage −65 V
VGS gate-source voltage −±15 V
IDDC drain current −9A
Tstg storage temperature −65 +150 °C
Tjjunction temperature −200 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-h thermal resistance from junction to heatsink Th=25°C, Ptot = 152 W, note 1 1.15 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS =0; I
D=1.4mA 65 −−V
VGSth gate-source threshold voltage VDS =10V; I
D= 140 mA 4.5 −5.5 V
IDSS drain-source leakage current VGS =0; V
DS =26V −−10 µA
IDSX on-state drain current VGS =VGSth +9V; V
DS =10V 18 −−A
IGSS gate leakage current VGS =±15 V; VDS =0 −−22 nA
gfs forward transconductance VDS =10V; I
D=5A −4−S
RDSon drain-source on-state resistance VGS =VGSth +9V; I
D=5A −0.17 −Ω
Crss feedback capacitance VGS =0; V
DS =26V; f=1MHz −3.4 −pF
MODE OF OPERATION f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
Two-tone, class-AB f1= 2200; f2= 2200.1 28 500 65 (PEP) >10.5 >30 ≤−25
2000 Sep 21 4
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2022-70
Fig.2 Power gain and drain efficiency as functions
of the average load power; typical values.
VDS =28V; I
DQ = 500 mA; Th≤25 °C;
f1=2200MHz; f
2= 2200.1 MHz.
0
4
8
12
16
25 30 35 40 45 50
PL avg (dBm)
GP
(dB)
0
10
20
30
40
ηD
(%)
GP
ηD
VDS =28V; I
DQ = 500 mA; Th≤25 °C;
Fig.3 Intermodulation distortion as a function of
the average load power; typical values.
-80
-60
-40
-20
0
25 30 35 40 45 50
PL avg (dBm)
dim
(dBc)
d3
d7
d5
Fig.4 Power gain and adjacent channel power ratio
as a function of the average load power;
typical values.
VDS =28V; I
DQ = 500 mA; Th=25°C;
f1=2200MHz; f
2= 2200.1 MHz.
Input signal: 3GPP W-CDMA 15DPCH
Peak to average ratio: 10.27 dB (0.0001 %)
0
4
8
12
16
25 30 35 40 45 50
PL avg (dBm)
GP
(dB)
-80
-60
-40
-20
0
ACPR
(dBc)
GP
ACPR5
ACPR10
2000 Sep 21 5
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2022-70
handbook, full pagewidth
MGS920
C7
C8
C3
L16
L14L12
L20 L1 L3
L2
L4
L6
L8
L10 L11
L15
L17
L13
L5 L7 L9
L18 L19
C6
C9
C4
C10
input
50 Ω
output
50 Ω
C1C2
C11 C12
R2
F1
C13 C14
VDD
R1
C5
Vgate
Fig.5 Class-AB test circuit at f = 2.2 GHz.
2000 Sep 21 6
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2022-70
List of components (See Figs 5 and 6)
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr= 2.2); thickness 0.79 mm.
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
C1, C2, C6, C7 Tekelec variable capacitor; type 37281 0.4 to 2.5 pF
C3, C8 multilayer ceramic chip capacitor; note 1 12 pF
C4, C9 multilayer ceramic chip capacitor; note 2 12 pF
C5, C12 electrolytic capacitor 10 µF; 100 V 2222 037 59109
C10 multilayer ceramic chip capacitor; note 1 1 nF
C11 multilayer ceramic chip capacitor 100 nF 2222 581 16641
C13 tantal SMD capacitor 4.5 µF; 50 V
C14 electrolytic capacitor 100 µF; 63 V 2222 037 58101
F1 Ferroxcube chip-bead 8DS3/3/8/9-4S2 4330 030 36301
L1 stripline; note 3 50 Ω2.9 ×2.4 mm
L2 stripline; note 3 14.5 Ω4×11.7 mm
L3 stripline; note 3 50 Ω3.7 ×2.4 mm
L4 stripline; note 3 6 Ω2×30.8 mm
L5 stripline; note 3 50 Ω3.6 ×2.4 mm
L6 stripline; note 3 9.5 Ω3×18.8 mm
L7 stripline; note 3 50 Ω7.8 ×2.4 mm
L8 stripline; note 3 9.8 Ω4×18.3 mm
L9 stripline; note 3 24.4 Ω5×6.3 mm
L10, L11 stripline; note 3 5.1 Ω7×37 mm
L12 stripline; note 3 25.4 Ω10.1 ×6mm
L13 stripline; note 3 5.7 Ω2.4 ×32.8 mm
L14 stripline; note 3 25.4 Ω7.4 ×6mm
L15 stripline; note 3 11.3 Ω2.5 ×15.6 mm
L16 stripline; note 3 50 Ω10.8 ×2.4 mm
L17 stripline; note 3 16.1 Ω3×10.4 mm
L18 stripline; note 3 50 Ω2.3 ×2.4 mm
L19 stripline; note 3 50 Ω3×2.4 mm
L20 stripline; note 3 50 Ω5.5 ×2.4 mm
R1, R2 metal film resistor 10 Ω, 0.6 W 2322 156 11009
2000 Sep 21 7
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2022-70
handbook, full pagewidth
BLF2047 INPUT
PH990109
BLF2047 OUTPUT
PH990110
MGS921
VDD
VGS
C5
C6 C7
C8
C9
C10
C11
C12
C13
C14
F1
R2
R1
C4
C3
C1
C2
BLF2047 INPUT
PH990109
BLF2047 OUTPUT
PH990110
50
95
50
Fig.6 Component layout for 2.2 GHz class-AB test circuit.
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr= 2.2), thickness 0.79 mm.
The other side is unetched and serves as a ground plane.
2000 Sep 21 8
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2022-70
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT502A 99-10-13
99-12-28
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
p
L
A
F
b
D
U2
H
Q
c
1
3
2
D1
E
A
C
q
U1
C
B
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08
20.02
19.61
9.53
9.25
19.94
18.92
9.91
9.65
4.72
3.99
cU2
0.25 0.5127.94
qw
2
w1
F
1.14
0.89
U1
34.16
33.91
L
5.33
4.32
p
3.38
3.12
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003
0.788
0.772
D1
19.96
19.66
0.786
0.774
0.375
0.364
0.785
0.745
0.390
0.380
0.186
0.157 0.01 0.021.100
0.045
0.035
1.345
1.335
0.210
0.170
0.133
0.123
0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
w1AB
M M M
2000 Sep 21 9
Philips Semiconductors Preliminary specification
UHF power LDMOS transistor BLF2022-70
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS PRODUCT
STATUS DEFINITIONS (1)
Objective specification Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification Production This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000 70
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Printed in The Netherlands 125002/04/pp10 Date of release: 2000 Sep 21 Document order number: 9397 750 07542
