Product Datasheet Search Results:
- BAS86T/R
- Nxp Semiconductors / Philips Semiconductors
- Schottky barrier diode - C<sub>d</sub> max.: 8@VR=1V pF; Configuration: single ; I<sub>F</sub> max: 200 mA; I<sub>FSM</sub> max: 5000 A; I<sub>R</sub> max: 5@VR=40VA; V<sub>F</sub>max: 450@IF=10mA mV; V<sub>R</sub> max: 50 V
Product Details Search Results:
Nxp.com/BAS86T/R
{"Peak Rep Rev Volt":"50","Avg. Forward Curr (Max)":"0.2","Peak Non-Repetitive Surge Current":"5 A","Rectifier Type":"Schottky Diode","Mounting":"Surface Mount","Rad Hardened":"No","Forward Voltage":"0.9","Operating Temperature Classification":"Military","Operating Temp Range":"-65C to 125C","Rev Recov Time":"4","Package Type":"Mini MELF","Peak Non-Repetitive Surge Current (Max)":"5","Rev Curr":"5","Configuration":"Single","Pin Count":"2"}...
1231 Bytes - 17:00:47, 07 November 2024
Semiconductors.philips.com/BAS86T/R
{"Package Body Material":"Glass","Package":"SOD-80C","I(O) Max.(A) Output Current":"200m","@Temp (°C) (Test Condition)":"50","@V(R) (V)(Test Condition)":"40","V(RRM)(V) Rep.Pk.Rev. Voltage":"50","I(RM) Max.(A) Reverse Current":"5.0u","Military":"N","@I(FM) (A) (Test Condition)":"1.0m","V(FM) Max.(V) Forward Voltage":"380m"}...
895 Bytes - 17:00:47, 07 November 2024
Documentation and Support
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FUSE_BASES_OFAZ_BASELINE_JULY_2024.pdf | 28.15 | 1 | Request | |
DS_DDR3_4GB_B_DIE_BASED_1_35V_RDIMM.pdf | 1.56 | 1 | Request | |
SAMSUNG_Z_SSD_AND_SCYLLADB_DELIVERING_LOW_LATENCY_AND_MULTI_TERABYTE_CAPACITY_IN_A_PERSISTENT_DATABASE.pdf | 1.99 | 1 | Request | |
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DS_DDR3_4GB_B_DIE_BASED_RDIMM.pdf | 1.63 | 1 | Request | |
DS_DDR3_4GB_A_DIE_BASED_RDIMM.pdf | 1.27 | 1 | Request | |
DS_DDR3_2GB_B_DIE_BASED_RDIMM.pdf | 1.18 | 1 | Request | |
DS_DDR3_4GB_B_DIE_BASED_1_35V_VLP_RDIMM.pdf | 1.54 | 1 | Request | |
DS_DDR3_2GB_C_DIE_BASED_1_35V_RDIMM.pdf | 1.54 | 1 | Request |