BAS86T/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 1996 Oct 01

2000 May 25

DISCRETE SEMICONDUCTORS

BAS86

Schottky barrier diode

lfpage

M3D121

2000 May 25 2

NXP Semiconductors Product data sheet

Schottky barrier diode BAS86

FEATURES

•Low forward vo lta ge

•High breakdown voltage

•Guard ring protected

•Hermetically-sealed small SMD

package.

APPLICATIONS

•Ultra high-speed switching

•Voltage clamping

•Protection circuits

•Blocking diodes.

DESCRIPTION

Planar Schottky barrier diode with an

integrated protection ring against

static dischar ges.

This surface mounted diode is

encapsulated in a hermetically sealed

SOD80C glass SMD pack ag e with

tin-plated metal disc s at each end. It

is suitable for “automatic placement”

and as such it can withsta nd

immersion soldering.

Fig.1 Simplified outline (SOD 80 C) , pin configuration and symbo l .

handbook, halfpage

MAM190

Cathode indicated by a grey band.

LIMITING VALUES

In accordance with the A bsolute Maxi mum Rating Sys tem (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRcontinuous revers e voltage −50 V

IFcontinuous forward current −200 mA

IF(AV) average forward curren t see Fig.2 −200 mA

IFRM repetitive peak forward current tp ≤ 1 sec.; δ ≤ 0.5 −500 mA

IFSM non-repetitive peak forward current tp = 10 ms −5 A

Tstg storage temperature −65 +150 °C

Tjjunction temperature −125 °C

Tamb operating ambient temperature −65 +125 °C

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NXP Semiconductors Pr oduct data sheet

Schottky barrier diode BAS86

ELECTRICAL CHARACTERISTIC S

Tamb = 25 °C; unless otherwise specified.

Note

1. Pulsed test: tp = 300 μs; δ = 0.02.

THERMAL CHARACTE RISTICS

Note

1. Refer to SOD80 standard mounting conditions.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage see Fig.3

IF = 0.1 mA 300 mV

IF = 1 mA 380 mV

IF = 10 mA 450 mV

IF = 30 mA 600 mV

IF = 100 mA 900 mV

IRreverse current VR = 40 V; see Fig.4; no te 1 5 μA

trr reverse recove ry time when switched from IF = 10 mA to IR = 10 mA;

RL = 100 Ω; measured at IR = 1 mA; see Fig.6 4ns

Cddiode capacit an ce f = 1 MHz; VR = 1 V; see Fig.5 8pF

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 320 K/W

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NXP Semiconductors Pr oduct data sheet

Schottky barrier diode BAS86

GRAPHICAL DATA

Fig.2 Derating curv e.

handbook, halfpage

100

150

200

250

0 50 100 150

IF(AV)

(mA)

T ( C)

amb

MRA540

handbook, halfpage

1.20.80.40 VF (V)

(mA)

103

102

10−1

MLD357

(1) (2) (3)

Fig.3 Forward current as a function of forward

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

(1) Tamb = 85 °C.

(2) Tamb = 25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

(nA)

−1

500

MGC686

10 20 30 40VR (V)

(1)

(2)

(3)

Fig.4 Reve rs e c urrent as a function of reverse

voltage; typical values.

f = 1 MHz.

Fig.5 Diode capacitance as a function of reverse

voltage; typical values.

handbook, halfpage

050

(pF)

MGC687

10 20 30 40 VR (V)

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NXP Semiconductors Pr oduct data sheet

Schottky barrier diode BAS86

Fig.6 Reverse recovery definitions.

andbook, halfpage

90%

10%

IRMRC129 - 1

2000 May 25 6

NXP Semiconductors Pr oduct data sheet

Schottky barrier diode BAS86

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

Note

1. The marking band indicates the cathode.

SOD80C 100H01 97-06-20

Hermetically sealed glass surface mounted package; 2 connectors SOD80

UNIT D

mm 1.60

1.45 3.7

3.3 0.3

DIMENSIONS (mm are the original dimensions)

(1)

0 1 2 mm

scale

2000 May 25 7

NXP Semiconductors Pr oduct data sheet

Schottky barrier diode BAS86

DATA SHEET STATUS

Notes

1. Please consult the mos t recently issued document befor e initiating or co mpleting a design.

2. The product status of device (s) described in this document may have changed since this do cument was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to informa tion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reason ably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modificati on .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict between information

in this document an d such terms and conditio ns, the latter

will prevail.

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may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property rights.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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The information pr e sent ed in this documen t d oes not form part of any quotation or co ntract, is believed to b e a ccur ate a nd re li a ble and may be chan ged

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands 613514/03/pp8 Date of release: 2000 May 25 Document orde r number: 9397 750 07025