Product Datasheet Search Results:

BAS216T/R.pdf1 Pages, 37 KB, Original
BAS216T/R
N/a
Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.
BAS216T/R.pdf9 Pages, 84 KB, Original
BAS216T/R
Nxp Semiconductors / Philips Semiconductors
High-speed switching diode - C<sub>d</sub> max.: 1.5 pF; Configuration: single ; I<sub>F</sub> max: 250 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 1000@VR=75V nA; IFRM: 500 mA; t<sub>rr</sub> max: 4 ns; V<sub>F</sub>max: 1@IF=50mA mV; V<sub>R</sub> max: 75 V

Product Details Search Results:

Semiconductors.philips.com/BAS216T/R
{"I(FSM) Max.(A) Pk.Fwd.Sur.Cur.":"1.0","I(O) Max.(A) Output Current":"250m","@t(w) (s) (Test Condition)":"1.0m","@I(R) (A) (Test Condition)":"10m","V(FM) Max.(V) Forward Voltage":"1.2","@Temp. (°C) (Test Condition)":"150","@V(R) (V)(Test Condition)":"75","V(RRM)(V) Rep.Pk.Rev. Voltage":"85","t(rr) Max.(s) Rev.Rec. Time":"4.0n","Package":"DO-214var","I(RM) Max.(A) Pk. Rev. Current":"50u","@I(F) (A) (Test Condition)":"10m","Military":"N","Semiconductor Material":"Silicon","I(RM) Max.(A) Reverse Current"...
1123 Bytes - 06:30:29, 29 October 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
DS_DDR3_4GB_B_DIE_BASED_1_35V_RDIMM.pdf1.561Request
SAMSUNG_Z_SSD_AND_SCYLLADB_DELIVERING_LOW_LATENCY_AND_MULTI_TERABYTE_CAPACITY_IN_A_PERSISTENT_DATABASE.pdf1.991Request
DS_DDR3_1GB_G_DIE_BASED_VLP_RDIMM.pdf1.321Request
DS_DDR3_1GB_D_DIE_BASED_RDIMM.pdf1.461Request
DS_DDR3_2GB_E_DIE_BASED_RDIMM.pdf1.431Request
DS_DDR3_4GB_A_DIE_BASED_1_35V_RDIMM.pdf1.321Request
DS_DDR3_4GB_B_DIE_BASED_RDIMM.pdf1.631Request
DS_DDR3_4GB_A_DIE_BASED_RDIMM.pdf1.271Request
DS_DDR3_2GB_B_DIE_BASED_RDIMM.pdf1.181Request
DS_DDR3_4GB_B_DIE_BASED_1_35V_VLP_RDIMM.pdf1.541Request
DS_DDR3_2GB_C_DIE_BASED_1_35V_RDIMM.pdf1.541Request
DS_DDR3_2GB_D_DIE_BASED_RDIMM.pdf1.671Request