DATA SH EET
Product data sheet
Supersedes data of 1999 Apr 22 2002 May 28
DISCRETE SEMICONDUCTORS
BAS216
High-speed switching diode
db
ook, halfpage
M3D154
2002 May 28 2
NXP Semiconductors Product data sheet
High-speed switching diode BAS216
FEATURES
•Small ceramic SMD package
•High switching speed: max. 4 ns
•Continuous reverse voltage:
max. 75 V
•Repetitive peak reverse voltage:
max. 85 V
•Repetitive peak fo rward current:
max. 500 mA.
APPLICATIONS
•High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS216 is a high-speed switchin g diode fabricated in planar tech nology,
and encapsulated in the SOD110 very small rectangular ceramic SMD
package.
handbook, 4 columns
MAM139
ka
cathode mark
top viewside viewbottom view
ak
Fig.1 Simplified outline (SOD110) and symbol.
Marking code: A6.
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board .
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage −85 V
VRcontinuous revers e voltage −75 V
IFcontinuous forward current note 1 −250 mA
IFRM repetitive peak forward current −500 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs−4 A
t = 1 ms −1 A
t = 1 s −0.5 A
Ptot total power dissipation Tamb = 25 °C; see Fig.2; note 1 −400 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
2002 May 28 3
NXP Semiconductors Pr oduct data sheet
High-speed switching diode BAS216
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C unless otherwise specified.
THERMAL CHARACTE RISTICS
Note
1. Device mounted on an FR4 printed-circuit board .
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFforward voltage see Fig.3
IF = 1 mA −715 mV
IF = 10 mA −855 mV
IF = 50 mA −1 V
IF = 150 mA −1.25 V
IRreverse current see Fig.5
VR = 25 V −30 nA
VR = 75 V −1µA
VR = 25 V; Tj = 150 °C−30 µA
VR = 75 V; Tj = 150 °C−50 µA
Cddiode capacit an ce f = 1 MHz; VR = 0; see Fig.6 −1.5 pF
trr reverse recove ry time when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
−4ns
Vfr forward recove ry voltage when switched from IF = 10 mA;
tr = 20 ns; see Fig.8 −1.75 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 200 K/W
Rth j-a thermal resistance from junction to ambient note 1 315 K/W
2002 May 28 4
NXP Semiconductors Pr oduct data sheet
High-speed switching diode BAS216
GRAPHICAL DATA
0 100 200
500
0
MSA570
250
Ptot
(mW)
T ( C)
o
amb
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible total power
dissipation as a function of ambient
temperature.
handbook, halfpage
02
300
IF
(mA)
0
100
200
MBG382
1VF (V)
(1) (3)(2)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
102
10−1104
102103
10
1
Fig.4 Maximum permissible non-repetitive peak forwar d current as a function of pulse duration.
Based on square wave currents.
Tj = 25 °C prior to surge.
2002 May 28 5
NXP Semiconductors Pr oduct data sheet
High-speed switching diode BAS216
105
104
103
102
10 2000
MSA563
100
IR
(nA)
T ( C)
o
j
75 V
25 V
V = 75 V
R
Fig.5 Reverse current as a function of junctio n
temperature.
Dotted line: maximum values.
Solid lines: typical values.
handbook, halfpage
0481216
0.6
0
0.4
0.2
0.5
MBH285
VR (V)
Cd
(pF)
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
2002 May 28 6
NXP Semiconductors Pr oduct data sheet
High-speed switching diode BAS216
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Reverse reco very voltage test circuit and waveforms.
(1) IR = 1 mA.
trt
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
Vfr
t
output
signal
V
Fig.8 Forward recovery voltage test circuit and waveforms.
2002 May 28 7
NXP Semiconductors Pr oduct data sheet
High-speed switching diode BAS216
PACKAGE OUTLINE
UNIT A
max.
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 1.6
D
2.10
1.90
y
0.1
E
1.40
1.10
DIMENSIONS (mm are the original dimensions)
SOD110 97-04-14
Very small ceramic rectangular surface mounted package SOD110
cathode
identifier
A
21
D
y
E
0 0.5 1 mm
scale
2002 May 28 8
NXP Semiconductors Pr oduct data sheet
High-speed switching diode BAS216
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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reserves the right to make changes to informa t ion
published in this doc ument, including without limitation
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificati on .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
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not complete, exhaus tive or legally binding.
NXP Semiconductors
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands 613514/05/pp9 Date of release: 2002 May 28 Document orde r number: 9397 750 09729
