Datasheet.Directory

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"45(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"75(V)","Packaging":"Tape and Reel","Power Dissipation":"110(W)","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"96 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"42 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0220 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"180 A","Channel Type":"N-CHANN...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 50\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"42A (Tc)","Gate Charge (Qg) @ Vgs":"51nC @ 10V","Product Photos":"TO-252-3","PCN Assembly/Origin":"AUIRFxx Series Wafer Process 29/Jul/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"22 mOhm @ 30A, 10V","Datasheets":"AUIRFR2607Z","FE...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"75 V","Transistor Polarity":"N-Channel","Rds On - Drain-Source Resistance":"22 mOhms","Configuration":"Single Quint Source","Mounting Style":"SMD/SMT","Forward Transconductance - Min":"36 S","Brand":"International Rectifier","Id - Continuous Drain Current":"45 A","Vgs th - Gate-Source Threshold Voltage":"4 V","Packaging":"Reel","Rise Time":"59 ns","Product Category":"MOSFET","Qg - Gate Charge":"34 nC","Pd - Power Dissipation":"110 W","P...