08/24/10
www.irf.com 1
AUTOMOTIVE MOSFET AUIRFR2607Z
Features
lAdvanced Process Technology
lUltra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
lLead-Free, RoHS Compliant
lAutomotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
S
D
G
D-Pak
AUIRFR2607Z
GDS
Gate Drain Source
S
D
G
D
HEXFET® Power MOSFET
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) A
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally limited)
d
mJ
E
AS
(Tested ) Single Pulse Avalanche Energy Tested Value
h
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
g
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
j
––– 1.38
R
θJA
Junction-to-Ambient (PCB mount)
i
––– 50 °C/W
R
θJA
Junction-to-Ambient ––– 110
-55 to + 175
300 (1.6mm from case )
10 lbf
y
in (1.1N
y
m)
110
0.72
± 20
45
k
32
180
42
96
96
See Fig.12a, 12b, 15, 16
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V
(BR)DSS
75V
R
DS(on)
typ. 17.6mΩ
max. 22mΩ
I
D (Silicon Limited)
45A
k
I
D (Package Limited)
42A
PD - 96323
AUIRFR2607Z
2www.irf.com
S
tat
i
c
El
ectr
i
ca
l Ch
aracter
i
st
i
cs
@ T
J
=
2
5
°C (
un
l
ess
ot
h
erw
i
se
spec
ifi
e
d)
Parameter Min. T
y
p. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.074 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 17.6 22 mΩ
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 36 ––– ––– S
IDSS Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 200
Gate-to-Source Reverse Leakage ––– ––– -200
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
QgTotal Gate Charge ––– 34 51
Qgs Gate-to-Source Charge ––– 8.9 –––
Qgd Gate-to-Drain ("Miller") Charge ––– 14 –––
td(on) Turn-On Delay Time ––– 14 –––
trRise Time –––59–––
td(off) Turn-Off Delay Time ––– 39 –––
tfFall Time –––28–––
LDInternal Drain Inductance Between lead,
6mm (0.25in.)
LSInternal Source Inductance from package
and center of die contact
Ciss Input Capacitance ––– 1440 –––
Coss Output Capacitance ––– 190 –––
Crss Reverse Transfer Capacitance ––– 110 –––
Coss Output Capacitance ––– 720 –––
Coss Output Capacitance ––– 130 –––
Coss eff. Effective Output Capacitance ––– 230 –––
Di
o
d
e
Ch
aracter
i
st
i
cs
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
r
r
Reverse Recovery Time ––– 30 45 ns
Q
r
r
Reverse Recovery Charge ––– 28 42 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
4.5
7.5
–––
–––
45
k
180
µA
nA
ns
nC
nH
–––
–––
pF
––– –––
––– –––
VGS = 10V
e
VDD = 38V
ID = 30A
RG = 15 Ω
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
e
T
J
= 25°C, I
F
= 30A, VDD = 38V
di/dt = 100A/µs
e
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 30A
e
VDS = VGS, ID = 50µA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 10V
e
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
f
VGS = 20V
VGS = -20V
VDS = 60V
VDS = 25V, ID = 30A
ID = 30A
Conditions
Notes through are on page 3
AUIRFR2607Z
www.irf.com 3
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.21mH
RG = 25Ω, IAS = 30A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
Notes:
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
Rθ is measured at TJ approximately 90°C
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 42A
Qualification Information
†
D
PAK MSL1
Qualification Level
Automotive
(per AEC-Q101) ††
Comments: This part number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
Charged Device
Model
Class C5(1125V)
(per AEC-Q101-005)
Moisture Sensitivity Level
RoHS Compliant Yes
ESD
Machine Model Class M4(425V)
(per AEC-Q101-002)
Human Body Model Class H1B(1000V)
(per AEC-Q101-001)
AUIRFR2607Z
4www.irf.com
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
Vs. Drain Current
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
≤ 60µs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ID, Drain-to-Source Current
(Α)
VDS = 20V
≤ 60µs PULSE WIDTH
TJ = 25°C
TJ = 175°C
0 10203040
ID, Drain-to-Source Current (A)
0
10
20
30
40
50
60
Gfs, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 10V
380µs PULSE WIDTH
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
≤ 60µs PULSE WIDTH
Tj = 25°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
AUIRFR2607Z
www.irf.com 5
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
0
400
800
1200
1600
2000
2400
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0 1020304050
QG Total Gate Charge (nC)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
VDS= 60V
VDS= 30V
VDS= 12V
ID= 30A
FOR TEST CIRCUIT
SEE FIGURE 13
0.0 0.4 0.8 1.2 1.6 2.0 2.4
VSD, Source-to-Drain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
DC
AUIRFR2607Z
6www.irf.com
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Normalized On-Resistance
Vs. Temperature
Ri (°C/W) τi (sec)
0.71826 0.000423
0.66173 0.004503
τJ
τJ
τ1
τ1
τ2
τ2
R1
R1R2
R2
τ
τC
Ci i/Ri
Ci= τi/Ri
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
10
20
30
40
50
ID , Drain Current (A)
LIMITED BY PACKAGE
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 30A
VGS = 10V
AUIRFR2607Z
www.irf.com 7
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage Vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
0
100
200
300
400
EAS, Single Pulse Avalanche Energy (mJ)
I D
TOP 3.5A
4.8A
BOTTOM 30A
1K
VCC
DUT
0
L
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS(th) Gate threshold Voltage (V)
ID = 1.0A
ID = 1.0mA
ID = 250µA
ID = 50µA
AUIRFR2607Z
8www.irf.com
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 30A
AUIRFR2607Z
www.irf.com 9
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
* V
GS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
AUIRFR2607Z
10 www.irf.com
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUFR2607Z
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRFR2607Z
www.irf.com 11
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
AUIRFR2607Z
12 www.irf.com
Ordering Information
Base part Package Type Complete Part Number
Form Quantity
AUIRFR2607Z DPak Tube 75 AUIRFR2607Z
Tape and Reel 2000 AUIRFR2607ZTR
Tape and Reel Left 3000 AUIRF2607ZTRL
Tape and Reel Right 3000 AUIRF2607ZTRR
Standard Pack
AUIRFR2607Z
www.irf.com 13
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
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