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- AT6000(LV) SERIES
- Atmel Corporation
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Advancedsemiconductor.com/AT6000
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Number of Elements":"1","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1600","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Sh...
1308 Bytes - 23:59:44, 27 December 2024
Advancedsemiconductor.com/AT600001
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Frequency Band":"C BAND","Breakdown Voltage-Min":"60 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Number of Terminals":"2","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Case Connection":"ISOLATED","Quality Factor-Min":"1600","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Con...
1308 Bytes - 23:59:44, 27 December 2024
Advancedsemiconductor.com/AT600010
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1600","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1272 Bytes - 23:59:44, 27 December 2024
Advancedsemiconductor.com/AT600011
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1600","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1272 Bytes - 23:59:44, 27 December 2024
Advancedsemiconductor.com/AT600015
{"Status":"ACTIVE","Package Body Material":"GLASS","Frequency Band":"C BAND","Breakdown Voltage-Min":"60 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Number of Terminals":"2","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Case Connection":"ISOLATED","Quality Factor-Min":"1600","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Configura...
1310 Bytes - 23:59:44, 27 December 2024
Advancedsemiconductor.com/AT600020
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1600","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1269 Bytes - 23:59:44, 27 December 2024
Advancedsemiconductor.com/AT600021
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"FLAT","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1600","Terminal Position":"UNSPECIFIED","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number...
1277 Bytes - 23:59:44, 27 December 2024
Advancedsemiconductor.com/AT600031
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1600","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1269 Bytes - 23:59:44, 27 December 2024
Advancedsemiconductor.com/AT600083
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1600","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1270 Bytes - 23:59:44, 27 December 2024
Advancedsemiconductor.com/AT600084
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.8","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.8000 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1600","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Number of T...
1272 Bytes - 23:59:44, 27 December 2024
Advancedsemiconductor.com/AT6000A
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Frequency Band":"C BAND","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"4.7","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"MICROWAVE","Breakdown Voltage-Min":"60 V","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.4000 pF","Number of Elements":"1","Diode Cap Tolerance":"10 %","Quality Factor-Min":"1700","Terminal Position":"END","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Sh...
1314 Bytes - 23:59:44, 27 December 2024
Advancedsemiconductor.com/AT6000A01
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Frequency Band":"C BAND","Breakdown Voltage-Min":"60 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"4.7","Variable Capacitance Diode Classification":"ABRUPT","Number of Terminals":"2","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"0.4000 pF","Case Connection":"ISOLATED","Quality Factor-Min":"1700","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND","Con...
1313 Bytes - 23:59:44, 27 December 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
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SA-SERIES_SBD.pdf | 0.43 | 1 | Request | |
MODBUS_CONFIGURATION_GUIDE_XSERIESG4.pdf | 3.13 | 1 | Request | |
STARTUP_GUIDE_XFC_XRC_XSERIES.pdf | 0.61 | 1 | Request | |
STARTUP_GUIDE_G3_XFC_XRC_XSERIES_RUSSIAN.pdf | 0.85 | 1 | Request | |
USER_MANUAL_XSERIES_G4_EZ_BLOCK_BUILDER_REV_AA.pdf | 1.57 | 1 | Request | |
STARTUP_GUIDE_G3_XFC_XRC_XSERIES_PORTUGUESE.pdf | 0.60 | 1 | Request | |
APPLICATION_DESCRIPTION_CORIOLIS_XSERIES_INTERFACE.pdf | 0.33 | 1 | Request | |
MANUAL_XSERIES_G4_PLUNGER_OPERATION_WITH_PCCU_GUIDE_AA.pdf | 1.34 | 1 | Request | |
STARTUP_GUIDE_G3_XFC_XRC_XSERIES_CHINESE.pdf | 0.72 | 1 | Request | |
APPLICATION_NOTE_XSERIES_G4_THERMS_AA.pdf | 9.47 | 1 | Request | |
SERIES_6300SST_TYPE_A_STAINLESS_STEEL_FITTINGS_LIQUID_TIGHT_FITTINGS_STRAIGHT_AND_90_ELBOWS.pdf | 0.54 | 1 | Request | |
MAINTENANCE_GUIDE_XSERIES_G4_EZ_BLOCK_REV_AA.pdf | 0.43 | 1 | Request |